欢迎访问ic37.com |
会员登录 免费注册
发布采购

28F320B3 参数 Datasheet PDF下载

28F320B3图片预览
型号: 28F320B3
PDF下载: 下载PDF文件 查看货源
内容描述: 智能3高级启动块4-, 8-,16- , 32兆位闪存系列 [SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY]
分类和应用: 闪存
文件页数/大小: 48 页 / 296 K
品牌: INTEL [ INTEL ]
 浏览型号28F320B3的Datasheet PDF文件第1页浏览型号28F320B3的Datasheet PDF文件第2页浏览型号28F320B3的Datasheet PDF文件第3页浏览型号28F320B3的Datasheet PDF文件第4页浏览型号28F320B3的Datasheet PDF文件第6页浏览型号28F320B3的Datasheet PDF文件第7页浏览型号28F320B3的Datasheet PDF文件第8页浏览型号28F320B3的Datasheet PDF文件第9页  
E
SMART 3 ADVANCED BOOT BLOCK  
1.0 INTRODUCTION  
1.1  
Smart 3 Advanced Boot Block  
Flash Memory Enhancements  
This datasheet contains the specifications for the  
Advanced Boot Block flash memory family, which is  
optimized for low power, portable systems. This  
family of products features 1.65 V–2.5 V or 2.7 V–  
3.6 V I/Os and a low VCC/VPP operating range of  
2.7 V–3.6 V for read, program, and erase  
operations. In addition this family is capable of fast  
programming at 12 V. Throughout this document,  
the term “2.7 V” refers to the full voltage range  
2.7 V–3.6 V (except where noted otherwise) and  
“VPP = 12 V” refers to 12 V ±5%. Section 1.0 and  
2.0 provide an overview of the flash memory family  
including applications, pinouts and pin descriptions.  
Section 3.0 describes the memory organization and  
operation for these products. Sections 4.0 and 5.0  
contain the operating specifications. Finally,  
Sections 6.0 and 7.0 provide ordering and other  
reference information.  
The Smart 3 Advanced Boot Block flash memory  
features  
Enhanced blocking for easy segmentation of  
code and data or additional design flexibility  
Program Suspend to Read command  
VCCQ input of 1.65 V–2.5 V on all I/Os. See  
Figures 1 through 4 for pinout diagrams and  
CCQ location  
V
Maximum program and erase time specification  
for improved data storage.  
Table 1. Smart 3 Advanced Boot Block Feature Summary  
Feature  
28F008B3, 28F016B3,  
28F032B3(1)  
28F400B3(2), 28F800B3,  
28F160B3, 28F320B3  
Reference  
VCC Read Voltage  
VCCQ I/O Voltage  
VPP Program/Erase Voltage  
Bus Width  
2.7 V– 3.6 V  
Section 4.2, 4.4  
Section 4.2, 4.4  
Section 4.2, 4.4  
Table 3  
1.65 V–2.5 V or 2.7 V– 3.6 V  
2.7 V– 3.6 V or 11.4 V– 12.6 V  
8-bit  
16 bit  
Speed  
80 ns, 90 ns, 100 ns, 110 ns  
Section 4.5  
Memory Arrangement  
1024 Kbit x 8 (8 Mbit),  
2048 Kbit x 8 (16 Mbit),  
4096 Kbit x 8 (32 Mbit)  
256 Kbit x 16 (4 Mbit),  
512 Kbit x 16 (8 Mbit),  
1024 Kbit x 16 (16 Mbit)  
2048 Kbit x 16 (32 Mbit)  
Section 2.2  
Blocking (top or bottom)  
Eight 8-Kbyte parameter blocks and  
Seven 64-Kbyte blocks (4-Mbit) or  
Fifteen 64-Kbyte blocks (8-Mbit) or  
Section 2.2  
Appendix D  
Thirty-one 64-Kbyte main blocks (16-Mbit)  
Sixty-three 64-Kbyte main blocks (32-Mbit)  
Locking  
WP# locks/unlocks parameter blocks  
All other blocks protected using VPP  
Section 3.3  
Table 8  
Operating Temperature  
Program/Erase Cycling  
Packages  
Extended: –40 °C to +85 °C  
Section 4.2, 4.4  
Section 4.2, 4.4  
100,000 cycles  
40-lead TSOP(1), 48-Ball  
48-Lead TSOP, 48-Ball Figure 3, Figure 4  
µBGA* CSP(2)  
µBGA CSP(2)  
NOTES:  
1.  
2.  
4-Mbit and 32-Mbit density not available in 40-lead TSOP.  
4-Mbit density not available in µBGA* CSP.  
5
PRELIMINARY