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273804-002 参数 Datasheet PDF下载

273804-002图片预览
型号: 273804-002
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内容描述: 超低电压的英特尔-R赛扬-R处理器( 0.13 ü在微FC- BGA封装 [Ultra-Low Voltage Intel-R Celeron-R Processor (0.13 u in the Micro FC-BGA Package]
分类和应用:
文件页数/大小: 82 页 / 1500 K
品牌: INTEL [ INTEL ]
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Ultra-Low Voltage Intel® Celeron® Processor — 650 MHz and 400 MHz  
6.1  
Thermal Diode  
The ULV Intel® Celeron® processor has an on-die thermal diode that should be used to monitor the  
die temperature (TJ). A thermal sensor located on the motherboard, or a stand-alone measurement  
kit, should monitor the die temperature of the processor for thermal management or  
instrumentation purposes. Tables 42 and 43 provide the diode interface and specifications.  
Note: The reading of the thermal sensor connected to the thermal diode will not necessarily reflect the  
temperature of the hottest location on the die. This is due to inaccuracies in the thermal sensor, on-  
die temperature gradients between the location of the thermal diode and the hottest location on the  
die, and time based variations in the die temperature measurement. Time based variations may  
occur when the sampling rate of the thermal diode (by the thermal sensor) is slower than the rate at  
which the TJ temperature may change.  
Table 42. Thermal Diode Interface  
Signal Name  
Pin/Ball Number  
Signal Description  
THERMDA  
THERMDC  
AF13  
AF14  
Thermal diode anode  
Thermal diode cathode  
Table 43. Thermal Diode Specifications  
Symbol  
Parameter  
Min  
Typ  
Max  
Unit  
Notes  
n
n
Diode Ideality Factor (5-150 µA)  
Diode Ideality Factor (5-300 µA)  
1.0011  
1.0003  
1.0067  
1.0091  
1.0122  
1.0178  
1, 2, 3, 4, 6  
1, 2, 3, 5, 6  
NOTES:  
1. Intel does not support or recommend operation of the thermal diode under reverse bias. Intel does not  
support or recommend operation of the thermal diode when the processor power supplies are not within  
their specified tolerance range.  
2. Characterized at 100° C.  
3. Not 100% tested. Specified by design/characterization.  
4. Specified for Forward Bias Current = 5 µA (min) and 150 µA (max).  
5. Specified for Forward Bias Current = 5 µA (min) and 300 µA (max).  
6. The ideality factor, n, represents the deviation from ideal diode behavior as exemplified by the diode  
equation: Where Is = saturation current, q = electronic charge, Vd = voltage across the diode,  
k = Boltzmann Constant, and T = absolute temperature (Kelvin).  
IFW = IS ⋅ (eqVD – 1)  
66  
Datasheet