IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=34 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
100
4
3.5
3
80
60
900 µA
90 µA
2.5
2
98%
40
1.5
1
typ
20
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
103
Ciss
103
102
101
102
25 °C
Coss
175 °C
25°C, 98%
101
175°C, 98%
Crss
100
0
0.5
1
1.5
2
0
40
80
120
160
V SD [V]
V DS [V]
Rev. 2.3
page 6
2011-05-20