IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
1770
135
4
2350 pF
V GS=0 V, V DS=100 V,
C oss
C rss
t d(on)
t r
180
-
f =1 MHz
11
9
-
-
-
-
ns
V DD=100 V,
V
GS=10 V, I D=17 A,
t d(off)
t f
Turn-off delay time
Fall time
21
4
R G=1.6 Ω
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
8
3
-
-
nC
Q gd
V DD=100 V, I D=17 A,
Q sw
Q g
5
-
V
GS=0 to 10 V
Gate charge total
22
4.4
54
29
-
V plateau
Q oss
Gate plateau voltage
Output charge
V
V DD=100 V, V GS=0 V
72
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
34
A
T C=25 °C
I S,pulse
136
V GS=0 V, I F=34 A,
T j=25 °C
V SD
Diode forward voltage
-
0.9
1.2
V
t rr
Reverse recovery time
-
-
110
500
-
-
ns
V R=100 V, I F=17 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
4) See figure 16 for gate charge parameter definition
Rev. 2.3
page 3
2011-05-20
INFINEON [ Infineon ]
