IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
-
-
1.1
62
40
K/W
R thJA
minimal footprint
Thermal resistance, junction -
ambient
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
200
2
-
-
V
V GS(th)
V DS=V GS, I D=90 µA
3
4
V DS=160 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
V
DS=160 V, V GS=0 V,
100
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
-
-
-
1
100 nA
R DS(on) V GS=10 V, I D=34 A
28
2.5
32
-
mΩ
R G
Ω
|V DS|>2|I D|R DS(on)max
,
g fs
Transconductance
27
54
-
S
I D=34 A
2
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.3
page 2
2011-05-20
INFINEON [ Infineon ]
