IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=17 A pulsed
V
I
parameter: T j(start)
parameter: V DD
100
10
8
6
4
2
160 V
25 °C
100 V
100 °C
40 V
125 °C
10
1
1
0
0
10
100
1000
5
10
15
20
25
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
230
V GS
Q g
220
210
200
190
180
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.3
page 7
2011-05-20