DF8MR12W1M1HF_B67
™
EasyPACK module
8 Characteristics diagrams
Switching losses (typical), MOSFET
E = f(RG)
Switching times (typical), MOSFET
t = f(ID)
VDD = 600 V, ID = 50 A, VGS = -3/18 V
RGoff = 2 Ω, RGon = 3.3 Ω, VDD = 600 V, Tvj = 175 °C, VGS
-3/18 V
=
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
0.01
0.001
0
5
10
15
20
25
30
35
0
10 20 30 40 50 60 70 80 90 100
Switching times (typical), MOSFET
t = f(RG)
Current slope (typical), MOSFET
di/dt = f(RG)
VDD = 600 V, ID = 50 A, Tvj = 175 °C, VGS = -3/18 V
VDD = 600 V, ID = 50 A, VGS = -3/18 V
1
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
0.01
0.001
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
Datasheet
12
Revision 0.10
2022-11-21
INFINEON [ Infineon ]
