DF8MR12W1M1HF_B67
™
EasyPACK module
8 Characteristics diagrams
Switching losses (typical), Diode, Boost
Erec = f(IF)
Switching losses (typical), Diode, Boost
Erec = f(RG)
RGon = 3.3 Ω, VCC = 600 V
IF = 40 A, VCC = 600 V
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
Transient thermal impedance, Diode, Boost
Forward characteristic (typical), Bypass-diode
Zth = f(t)
IF = f(VF)
10
60
55
50
45
40
35
30
25
20
15
10
5
1
0.1
0
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
1
10
Datasheet
14
Revision 0.10
2022-11-21
INFINEON [ Infineon ]
