DF8MR12W1M1HF_B67
™
EasyPACK module
8 Characteristics diagrams
Capacity characteristic (typical), MOSFET
Forward characteristic body diode (typical), MOSFET
ISD = f(VSD
C = f(VDS
)
)
f = 100 kHz, Tvj = 25 °C, VGS = 0 V
Tvj = 25 °C
100
100
90
80
70
60
50
40
30
20
10
0
10
1
0.1
0.01
0.1
1
10
100
1000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Forward characteristic body diode (typical), MOSFET Switching losses (typical), MOSFET
VSD = f(Tvj)
E = f(ID)
ISD = 50 A
RGoff = 2 Ω, RGon = 3.3 Ω, VDD = 600 V, VGS = -3/18 V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
25
50
75
100
125
150
175
0
10 20 30 40 50 60 70 80 90 100
Datasheet
11
Revision 0.10
2022-11-21
INFINEON [ Infineon ]
