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BTS7960B 参数 Datasheet PDF下载

BTS7960B图片预览
型号: BTS7960B
PDF下载: 下载PDF文件 查看货源
内容描述: 高电流PN半桥NovalithIC 43 A, 7 mз + 9 mз [High Current PN Half Bridge NovalithIC 43 A, 7 mз + 9 mз]
分类和应用: 外围驱动器驱动程序和接口接口集成电路光电二极管
文件页数/大小: 28 页 / 464 K
品牌: INFINEON [ Infineon ]
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High Current PN Half Bridge  
BTS 7960  
Maximum Ratings  
3
Maximum Ratings  
-40 °C < Tj < 150 °C (unless otherwise specified)  
Pos  
Parameter  
Symbol  
Limits  
Unit Test Condition  
min max  
Electrical Maximum Ratings  
3.0.1 Supply voltage  
VVS  
VIN  
-0.3 45  
-0.3 5.3  
V
V
3.0.2 Logic Input Voltage  
VINH  
3.0.3 HS/LS continuous drain ID(HS)  
current  
-40  
401)  
A
TC < 85°C  
ID(LS)  
switch active  
3.0.4 HS pulsed drain current ID(HS)  
3.0.5 LS pulsed drain current ID(LS)  
-60  
-60  
601)  
601)  
A
A
V
V
TC < 85°C  
tpulse = 10ms  
3.0.6 Voltage at SR pin  
VSR  
-0.3 1.0  
3.0.7 Voltage between VS and VVS -VIS -0.3 45  
IS pin  
3.0.8 Voltage at IS pin  
VIS  
-20  
45  
V
Thermal Maximum Ratings  
3.0.9 Junction temperature  
3.0.10 Storage temperature  
Tj  
Tstg  
-40  
-55  
150 °C  
150 °C  
ESD Susceptibility  
3.0.11 ESD susceptibility HBM VESD  
kV  
according to EIA/  
JESD 22-A 114B  
IN, INH, SR, IS  
OUT, GND, VS  
-2  
-6  
2
6
1)  
Maximum reachable current may be smaller depending on current limitation level  
Note: Maximum ratings are absolute ratings; exceeding any one of these values may  
cause irreversible damage to the device. Exposure to maximum rating conditions  
for extended periods of time may affect device reliability  
Data Sheet  
6
Rev. 1.1, 2004-12-07  
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