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BTS7960B 参数 Datasheet PDF下载

BTS7960B图片预览
型号: BTS7960B
PDF下载: 下载PDF文件 查看货源
内容描述: 高电流PN半桥NovalithIC 43 A, 7 mз + 9 mз [High Current PN Half Bridge NovalithIC 43 A, 7 mз + 9 mз]
分类和应用: 外围驱动器驱动程序和接口接口集成电路光电二极管
文件页数/大小: 28 页 / 464 K
品牌: INFINEON [ Infineon ]
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High Current PN Half Bridge  
BTS 7960  
Block Description and Characteristics  
4.2.1  
Power Stages - Static Characteristics  
– 40 °C < Tj < 150 °C, 8 V < VS < 18 V (unless otherwise specified)  
Pos. Parameter Symbol Limit Values Unit Test Conditions  
min. typ. max.  
High Side Switch - Static Characteristics  
4.2.1 On state high side  
resistance  
RON(HS)  
mΩ  
IOUT = 9 A  
VS= 13.5 V  
Tj = 25 °C  
Tj = 150 °C  
7
10  
9
12.5  
4.2.2 Leakage current high IL(LKHS)  
1
µA  
V
INH = 0 V  
side  
VOUT = 0 V  
Tj < 85 °C  
50 µA  
VINH = 0 V  
VOUT = 0 V  
Tj = 150 °C  
IOUT = -9 A  
Tj = -40 °C  
Tj = 25 °C  
Tj = 150 °C  
4.2.3 Reverse diode  
forward-voltage high  
side 1)  
VDS(HS)  
V
1.5  
1.1  
0.9  
0.8  
0.6  
0.8  
Low Side Switch - Static Characteristics  
4.2.4 On state low side  
resistance  
RON(LS)  
mΩ  
IOUT = -9 A  
VS= 13.5V  
Tj = 25 °C  
Tj = 150 °C  
9
14  
12  
18  
4.2.5 Leakage current low IL(LKLS)  
1
µA  
V
INH = 0 V  
side  
VOUT = VS  
Tj < 85 °C  
15 µA  
VINH = 0 V  
V
OUT = VS  
Tj = 150 °C  
4.2.6 Reverse diode  
forward-voltage low  
side 1)  
VSD(LS)  
V
1.5  
1.1  
IOUT = 9 A  
0.9  
0.8  
0.6  
Tj = -40 °C  
Tj = 25 °C  
Tj = 150 °C  
0.8  
1)  
Due to active freewheeling, diode is conducting only for a few µs, depending on R  
SR  
Data Sheet  
9
Rev. 1.1, 2004-12-07  
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