High Current PN Half Bridge
BTS 7960
Overview
1
Overview
The BTS 7960 is part of the NovalithIC family containing three separate chips in one
package: One p-channel highside MOSFET and one n-channel lowside MOSFET
together with a driver IC, forming a fully integrated high current half-bridge. All three
chips are mounted on one common leadframe, using the chip on chip and chip by chip
technology. The power switches utilize vertical MOS technologies to ensure optimum on
state resistance. Due to the p-channel highside switch the need for a charge pump is
eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the
integrated driver IC which features logic level inputs, diagnosis with current sense, slew
rate adjustment, dead time generation and protection against overtemperature,
overvoltage, undervoltage, overcurrent and short circuit. The BTS 7960 can be
combined with other BTS 7960 to form H-bridge and 3-phase drive configurations.
1.1
Block Diagram
HS base-chip
BTS 7960
VS
Top-chip
Gate Driver
OUT
IN
INH
SR
Dead Time Gen.
Slew Rate Adj.
UV Shut Down
OV Lock Out
OT Shut Down
Current Lim.
Diagnosis
LS base-chip
IS
Current Sense
GND
Figure 1
Block Diagram
Data Sheet
3
Rev. 1.1, 2004-12-07
INFINEON [ Infineon ]
