BTS 611 L1
GND disconnect with GND pull up
Inductive Load switch-off energy
dissipation
E
4
bb
V
3
bb
E
IN1
IN2
ST
AS
1
7
OUT1
OUT2
V
IN1
E
Load
PROFET
V
6
bb
IN
V
IN2
GND
2
5
O U T
PROFET
=
ST
E
L
G N D
L
V
V
GND
ST
V
bb
Z
{
R
L
L
E
R
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
V
disconnect with energized inductive
bb
Energy stored in load inductance:
load
2
L
1
E = / ·L·I
L
2
While demagnetizing load inductance, the energy
dissipated in PROFET is
4
V
3
bb
IN1
IN2
ST
1
7
OUT1
OUT2
E
AS= Ebb + EL - ER= VON(CL)·iL(t) dt,
high
∫
PROFET
6
5
with an approximate solution for RL > 0Ω:
GND
2
IL·L
2·RL
IL·RL
|VOUT(CL)|
E
=
AS
·(Vbb +|VOUT(CL)|)· ln (1+
)
Maximum allowable load inductance for
a single switch off (both channels parallel)
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
V
bb
V
bb = 12 V, RL = 0 Ω
Normal load current can be handled by the PROFET
itself.
L [mH]
1000
V
disconnect with charged external
bb
inductive load
4
V
3
bb
IN1
1
7
OUT1
OUT2
high
100
10
1
PROFET
IN2
6
D
ST
5
GND
2
V
bb
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
2
3
4
5
6
7
8
I
[A]
L
Semiconductor Group
9
INFINEON [ Infineon ]
