HITFET - BTS3080TF
Smart Low-Side Power Switch
General Product Characteristics
1) Not subject to production test, specified by design
Note:
Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics
table.
4.3
Thermal Resistance
Note:
This thermal data was generated in accordance with JEDEC JESD51 standards.
For more information, go to www.jedec.org.
Table 4
Thermal Resistance PG-TO252-3
Parameter
Symbol
Values
Unit Note or
Test Condition
Number
Min. Typ. Max.
1) 2)
1) 3)
1) 4)
Junction to Soldering Point
Junction to Ambient (2s2p)
RthJSP
–
–
–
3.7
27
41
–
–
–
K/W
K/W
K/W
P_4.3.3
P_4.3.7
P_4.3.11
RthJA(2s2p)
RthJA(1s0p)
Junction to Ambient
(1s0p+600 mm2 Cu)
1) Not subject to production test, specified by design
2) Specified RthJSPvalue is simulated at natural convection on a cold plate setup (all pins are fixed to ambient
temperature).
TA = 85°C. Device is loaded with 1 W power.
3) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board;
The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 µm Cu,
2 x 35 µm Cu). Where applicable a thermal via array under the ex posed pad contacted the first inner copper layer.
TA = 85°C, Device is loaded with 1 W power.
4) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 1s0p board;
The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with additional heatspreading copper
area of 600 mm2 and 70 µm thickness. TA = 85°C, Device is loaded with 1 W power.
4.3.1
PCB set up
The following PCB set up was implemented to determine the transient thermal impedance1)
70µm modelled (traces)
35µm, 100% metalization*
70µm, 5% metalization*
Figure 4
Cross section JEDEC2s2p
1) (*) means percentual Cu metalization on each layer
Datasheet
8
Rev. 1.0
2016-06-01
INFINEON [ Infineon ]
