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BTS3080TF 参数 Datasheet PDF下载

BTS3080TF图片预览
型号: BTS3080TF
PDF下载: 下载PDF文件 查看货源
内容描述: [BTS3080TF 是一款 80 mΩ 智能单通道低边电源开关,采用 PG-T0252-3 封装,提供嵌入式保护功能。功率晶体管由 N 通道垂直功率MOSFET 构成。]
分类和应用: 开关驱动电源开关接口集成电路晶体管
文件页数/大小: 39 页 / 1119 K
品牌: INFINEON [ Infineon ]
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HITFET - BTS3080TF  
Smart Low-Side Power Switch  
General Product Characteristics  
4
General Product Characteristics  
4.1  
Absolute Maximum Ratings  
Table 2  
Absolute Maximum Ratings 1)  
Tj = -40°C to +150°C; all voltages with respect to ground, positive current flowing into pin (unless otherwise  
specified)  
Parameter  
Symbol  
Values  
Unit Note or Test Condition Number  
Min. Typ. Max.  
Voltages  
Output voltage  
VOUT  
40  
31  
V
V
internally clamped  
P_4.1.1  
P_4.1.2  
Battery voltage for short circuit VBAT(SC)  
l = 0 or 5 m  
protection  
R
SC = 20 m+ RCable  
RCable = l * 16 m/m  
SC = 5 µH + LCable  
L
LCable = l * 1 µH/m  
VIN = 5 V  
2)  
Battery voltage for load dump VBAT(LD)  
40  
V
P_4.1.4  
protection  
RI = 2 Ω  
RL = 4.5 Ω  
tD = 400 ms  
suppressed pulse  
Input Pin  
Input Voltage  
VIN  
IIN  
-0.3  
5.5  
2
V
-
3)  
P_4.1.7  
Input current  
mA  
P_4.1.10  
in inverse condition on OUT to  
GND  
VOUT < -0.3 V  
Power Stage  
Load current  
Energies  
| IL |  
IL(LIM)  
A
-
P_4.1.11  
P_4.1.15  
Unclamped single inductive  
energy single pulse  
EAS  
38  
mJ  
IL(0) = IL(NOM)  
VBAT = 13.5 V  
T
J(0) = 150°C  
Unclamped repetitive inductive EAR(10k)  
energy pulse with 10 k cycles  
38  
30  
24  
mJ  
mJ  
mJ  
IL(0) = IL(NOM)  
VBAT = 13.5 V  
P_4.1.23  
P_4.1.27  
P_4.1.31  
T
J(0) = 105°C  
Unclamped repetitive inductive EAR(100k)  
energy pulse with 100 k cycles  
IL(0) = IL(NOM)  
VBAT = 13.5 V  
TJ(0) = 105°C  
Unclamped repetitive inductive EAR(1M)  
energy pulse with 1 M cycles  
IL(0) = IL(NOM)  
VBAT = 13.5 V  
T
J(0) = 105°C  
Datasheet  
6
Rev. 1.0  
2016-06-01  
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