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BTS3080TF 参数 Datasheet PDF下载

BTS3080TF图片预览
型号: BTS3080TF
PDF下载: 下载PDF文件 查看货源
内容描述: [BTS3080TF 是一款 80 mΩ 智能单通道低边电源开关,采用 PG-T0252-3 封装,提供嵌入式保护功能。功率晶体管由 N 通道垂直功率MOSFET 构成。]
分类和应用: 开关驱动电源开关接口集成电路晶体管
文件页数/大小: 39 页 / 1119 K
品牌: INFINEON [ Infineon ]
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HITFET - BTS3080TF  
Smart Low-Side Power Switch  
Power Stage  
5.3  
Inductive Load  
5.3.1  
Output Clamping  
When switching off inductive loads with low side switches, the Drain-Source voltage VOUT rises above battery  
potential, because the inductance intends to continue driving the current. To prevent unwanted high voltages  
the device has a voltage clamping mechanism to keep the voltage at VOUT(CLAMP). During this clamping  
operation mode the device heats up as it dissipates the energy from the inductance. Therefore the maximum  
allowed load inductance is limited. See Figure 11 and Figure 12 for more details.  
VBAT  
ZL  
IL  
OUT ( DMOS Drain  
VOUT  
GND ( DMOS Source)  
IGND  
Figure 11 Output Clamp Circuitry  
VIN  
t
IOUT  
t
VOUT  
VOUT(CLAMP)  
VBAT  
t
Figure 12 Switching an Inductive Load  
Datasheet  
12  
Rev. 1.0  
2016-06-01  
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