HITFET - BTS3080TF
Smart Low-Side Power Switch
Power Stage
In this situation the load is driven by a current through the intrinsic body diode of the BTS3080TF. During
Reverse Battery all protection functions like current limitation, over temperature shut down and over voltage
clamping are not available.
The device is dissipating a power loss which is defined by the driven current and the voltage drop on the DMOS
reverse body diode “-VOUT”.
5.5
Inverse Current capability
An inverse current situation means the OUT pin is pulled below GND potential by current flowing from GND to
OUT (for example in half-bridge configuration and inductive load using freewheeling via the low side path).
In this situation the load is driven by a current through the intrinsic body diode (device off) of the BTS3080TF.
During Inverse operation all protection functions like current limitation, over temperature shut-down and
over voltage clamping are not available.
The device is dissipating a power loss which is defined by the driven current and the voltage drop on the DMOS
reverse body diode “-VOUT”.
Input current behavior during inverse condition on Output
Please note that during inverse current on drain an increased input current can flow. To limit this current it is
needed to place a resistor (RIN) in line with the input, also to prevent the microcontroller I/O pins from latching
up in this case. The value of this resistor is a compromise of input voltage level in normal operation and
maximum allowed device input current IIN or I/O current (for example of microcontroller).
VOHuC (max)
RIN (min)
=
(5.3)
IIN (max)
with IIN(max) = 2 mA (see also “Absolute Maximum Ratings” on Page 6) allow for the device;
OHµC(max) maximum high level voltage of the control signal (microcontroller I/O)
V
5.6
Characteristics
Please see “Power Stage” on Page 11 for electrical characteristic table.
Datasheet
14
Rev. 1.0
2016-06-01
INFINEON [ Infineon ]
