HITFET - BTS3080TF
Smart Low-Side Power Switch
Electrical Characteristics
8
Electrical Characteristics
8.1
Power Stage
Please see Chapter “Power Stage” on Page 11 for parameter description and further details.
Table 5 Electrical Characteristics: Power Stage
Tj = -40°C to +150°C, VBAT = 6 V to 18 V, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter
Symbol
Values
Unit Note or
Test Condition
Number
Min. Typ. Max.
Power Stage
On-State resistance
at hot temperature (150°C)
RDS(ON)_150
RDS(ON)_25
IL(NOM)
–
–
–
134 160 mΩ TJ = 150°C;
VIN = 5 V;
P_8.1.3
P_8.1.7
P_8.1.27
IL = IL(NOM)
On-State resistance
at ambient temperature (25°C)
69
3
–
–
mΩ TJ = 25°C;
VIN = 5 V;
IL = IL(NOM)
1)
Nominal load current
A
TJ < 150°C;
TA = 85°C
VIN = 5 V
2)
OFF state load current,
Output leakage current
IL(OFF)_85
–
–
0.6 µA
P_8.1.31
VBAT = 13.5 V;
IN = 0 V;
TJ ≤ 85°C
V
OFF state load current,
Output leakage current
IL(OFF)_150
–
–
0.5
2
µA VBAT = 18 V;
VIN = 0 V;
P_8.1.35
P_8.1.45
TJ = 150°C
Reverse body diode forward voltage -VOUT
0.8 1.1
V
IL = -IL(NOM)
IN = 0 V
;
V
Datasheet
18
Rev. 1.0
2016-06-01
INFINEON [ Infineon ]
