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BTS3080TF 参数 Datasheet PDF下载

BTS3080TF图片预览
型号: BTS3080TF
PDF下载: 下载PDF文件 查看货源
内容描述: [BTS3080TF 是一款 80 mΩ 智能单通道低边电源开关,采用 PG-T0252-3 封装,提供嵌入式保护功能。功率晶体管由 N 通道垂直功率MOSFET 构成。]
分类和应用: 开关驱动电源开关接口集成电路晶体管
文件页数/大小: 39 页 / 1119 K
品牌: INFINEON [ Infineon ]
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HITFET - BTS3080TF  
Smart Low-Side Power Switch  
Power Stage  
5.3.1.1 Maximum Load Inductance  
While demagnetization of inductive loads, energy has to be dissipated by the BTS3080TF.  
This energy can be calculated by the following equation:  
VBAT VOUT(CLAMP)  
RL × IL  
VBAT VOUT(CLAMP)  
L
E =VOUT(CLAMP)  
×
×ln 1−  
+ IL  
×
(5.1)  
(5.2)  
RL  
RL  
Following equation simplifies under the assumption of RL = 0  
1
VBAT  
2
E = LIL × 1−  
2
VBAT VOUT(CLAMP)  
For maximum single avalanche energy please also refer to EAS value in “Energies” on Page 6.  
1000  
100  
10  
1
0,1  
1
10  
IL [A]  
Figure 13  
Maximum load inductance for single pulse  
L = f(IL), TJ(0) = TJ, start = 150°C, VBAT = 13.5 V  
5.4  
Reverse Current capability  
A reverse battery situation means the OUT pin is pulled below GND potentials to -VBAT via the load ZL.  
Datasheet  
13  
Rev. 1.0  
2016-06-01  
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