BGA855N6
Low Noise Amplifier for Lower L-Band GNSS Applications
Electrical Characteristics
Table 4
TA = 25 °C, VCC = 1.8 V, VPON = 1.8 V, f = 1164 - 1300 MHz
Electrical Characteristics VCC = 1.8V1)
Parameter
Symbol
Values
Typ.
1.8
4.8
0.2
–
Unit Note or Test Condition
Min.
1.1
–
Max.
3.3
5.8
3
Supply voltage
Supply current
VCC
ICC
V
–
mA
µA
V
ON Mode
OFF Mode
ON Mode
OFF Mode
ON Mode
OFF Mode
–
–
Power on voltage
Supply current
VPON
IPON
0.8
0
VCC
0.4
7.5
1
–
V
–
2.5
–
µA
µA
dB
–
Insertion power gain
f = 1214MHz
Noise figure2)
f = 1214 MHz, ZS = 50 Ω
Input return loss3)
f = 1214 MHz
Output return loss3)
f = 1214 MHz
Reverse isolation3)
f = 1214 MHz
Power on time4)7)
|S21|2
NF
16.8
17.8
18.8
–
0.60
12
1.10
dB
dB
dB
dB
–
–
–
–
RLIN
RLOUT
1/|S12|2
tS
9
–
–
–
12
19
20
22
–
3
5
–
µs
OFF to ON Mode
–
Inbandinput1dB-compression IP1dB
point, f = 1214 MHz3)
-15
-11
dBm
Inband input 3rd-order
IIP3
IIP3OOB
k
-5
0
1
–
–
–
–
dBm
dBm
–
intercept point3)5)
f1 = 1214 MHz, f2 = f1 +/- 1 MHz
Out of band input 3rd-order
-4
–
intercept point6)7)
f1 = 1850 MHz, f2 = 2500 MHz
Stability7)
> 1
f = 20 MHz ... 10 GHz
1) Based on the application described in Chapter 4
2) PCB losses are subtracted
3) Verification based on AQL; not 100% tested in production
4) LNA Gain changed to 90% of final gain value (in dB)
5) Input power = -30 dBm for each tone
6) Input power = -25 dBm for each tone
7) Guaranteed by device design; not tested in production
Data Sheet
7
Revision 2.1
2023-01-11
INFINEON [ Infineon ]
