BGA855N6
Low Noise Amplifier for Lower L-Band GNSS Applications
Features
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Features
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Insertion power gain: 17.8 dB
Low noise figure: 0.60 dB
Low current consumption: 4.8 mA
High linearity performance IIP3: 0 dBm
Operating frequencies: 1164 - 1300 MHz
Supply voltage: 1.1 V to 3.3 V
Ultra small TSNP-6-10 leadless package (footprint: 0.7 x 1.1 mm2)
B9HF Silicon Germanium technology
RF output internally matched to 50 Ohm
Only one external matching component needed
2kV HBM ESD protection (including AI-pin)
Pb-free (RoHS compliant) package
Specifically designed for:
- L2/L5 GPS Signals
- E5a/E5b/E6 Galileo Signals
- G2/G3 Glonass Signals
- B2/B3 Beidou Signals
VCC PON
AI
AO
ESD
GND
BGA855N6_Blockdiagram.vsd
Figure 1
Block Diagram
Product Name
Marking
Package
BGA855N6
6
TSNP-6-10
Data Sheet
3
Revision 2.1
2023-01-11
INFINEON [ Infineon ]
