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BFP640 参数 Datasheet PDF下载

BFP640图片预览
型号: BFP640
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗RF晶体管 [NPN Silicon Germanium RF Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 8 页 / 274 K
品牌: INFINEON [ Infineon ]
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BFP640  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
AC Characteristics (verified by random sampling)  
Transition frequency  
30  
40  
-
GHz  
f
T
I = 30 mA, V = 3 V, f = 1 GHz  
C
CE  
-
-
-
0.09  
0.23  
0.5  
0.2 pF  
Collector-base capacitance  
= 3 V, f = 1 MHz  
C
C
C
F
cb  
ce  
eb  
V
CB  
-
-
Collector emitter capacitance  
= 3 V, f = 1 MHz  
V
CE  
Emitter-base capacitance  
= 0.5 V, f = 1 MHz  
V
EB  
dB  
Noise figure  
I = 5 mA, V = 3 V, f = 1.8 GHz, Z = Z  
Sopt  
-
-
0.65  
1.3  
-
-
C
CE  
S
I = 5 mA, V = 3 V, f = 6 GHz, Z = Z  
C
CE  
S
Sopt  
1)  
Power gain, maximum stable  
G
G
-
24  
-
dB  
dB  
ms  
ma  
I = 30 mA, V = 3 V, Z = Z  
,
,
C
CE  
S
Sopt  
Z = Z  
, f = 1.8 GHz  
L
Lopt  
1)  
-
12.5  
-
Power gain, maximum available  
I = 30 mA, V = 3 V, Z = Z  
C
CE  
S
Sopt  
Z = Z  
L
, f = 6 GHz  
Lopt  
2
Transducer gain  
|S  
|
dB  
21e  
I = 30 mA, V = 3 V, Z = Z = 50 ,  
C
CE  
S
L
f = 1.8 GHz  
-
21  
-
I = 30 mA, V = 3 V, Z = Z = 50 ,  
C
CE  
S
L
f = 6 GHz  
-
-
10.5  
26.5  
-
-
2)  
Third order intercept point at output  
= 3 V, I = 30 mA, f = 1.8 GHz,  
IP  
dBm  
3
V
CE  
C
Z = Z = 50 Ω  
S
L
1dB Compression point at output  
P
-
13  
-
-1dB  
I = 30 mA, V = 3 V, Z = Z = 50 ,  
C
CE  
S
L
f = 1.8 GHz  
1
1/2  
G
= |S  
/ S  
| (k-(k²-1) ), G = |S  
/ S  
|
ma  
21e  
12e  
ms  
21e  
12e  
2
IP3 value depends on termination of all intermodulation frequency components.  
Termination used for this measurement is 50from 0.1 MHz to 6 GHz  
Apr-21-2004  
3
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