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BFP640 参数 Datasheet PDF下载

BFP640图片预览
型号: BFP640
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗RF晶体管 [NPN Silicon Germanium RF Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 8 页 / 274 K
品牌: INFINEON [ Infineon ]
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BFP640  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
300  
Unit  
K/W  
1)  
R
thJS  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
4
4.5  
-
V
Collector-emitter breakdown voltage  
V
(BR)CEO  
I = 1 mA, I = 0  
C
B
-
-
30  
µA  
Collector-emitter cutoff current  
= 13 V, V = 0  
I
CES  
V
CE  
BE  
-
-
-
-
100 nA  
Collector-base cutoff current  
= 5 V, I = 0  
I
CBO  
V
CB  
E
3
µA  
-
Emitter-base cutoff current  
= 0.5 V, I = 0  
I
EBO  
V
EB  
C
110  
180  
270  
DC current gain  
I = 30 mA, V = 3 V, pulse measured  
h
FE  
C
CE  
1
For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
Apr-21-2004  
2
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