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2ED2110S06M 参数 Datasheet PDF下载

2ED2110S06M图片预览
型号: 2ED2110S06M
PDF下载: 下载PDF文件 查看货源
内容描述: [650 V high speed, high current high-side and low-side gate driver with typical 2.5 A source and sink currents in DSO-16 package for driving power MOSFETs and IGBTs.]
分类和应用: 双极性晶体管
文件页数/大小: 31 页 / 1407 K
品牌: INFINEON [ Infineon ]
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2ED2110S06M  
650 V high-side and low-side driver with integrated bootstrap diode  
11  
Additional documentation and resources  
Several technical documents related to the use of HVICs are available at www.infineon.com; use the Site Search  
function and the document number to quickly locate them. Below is a short list of some of these documents.  
Application Notes:  
Understanding HVIC Datasheet Specifications  
HV Floating MOS-Gate Driver ICs  
Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs  
Bootstrap Network Analysis: Focusing on the Integrated Bootstrap Functionality  
Design Tips:  
Using Monolithic High Voltage Gate Drivers  
Alleviating High Side Latch on Problem at Power Up  
Keeping the Bootstrap Capacitor Charged in Buck Converters  
Managing Transients in Control IC Driven Power Stages  
Simple High Side Drive Provides Fast Switching and Continuous On-Time  
11.1  
Infineon online forum resources  
The Gate Driver Forum is live at Infineon Forums (www.infineonforums.com). This online forum is where the  
Infineon gate driver IC community comes to the assistance of our customers to provide technical guidance how  
to use gate drivers ICs, existing and new gate driver information, application information, availability of demo  
boards, online training materials for over 500 gate driver ICs. The Gate Driver Forum also serves as a repository  
of FAQs where the user can review solutions to common or specific issues faced in similar applications.  
Register online at the Gate Driver Forum and learn the nuances of efficiently driving a power switch in any given  
power electronic application.  
Datasheet  
www.infineon.com/soi  
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V 2.5  
2023-01-31  
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