SPP11N80C3
SPA11N80C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
50
V/ns
V
= 640 V, I = 11 A, T = 125 °C
DS
D j
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
-
-
-
-
-
-
-
-
-
-
0.8 K/W
3.7
62
80
Thermal resistance, junction - case
thJC
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
Soldering temperature, wavesoldering
R
thJC_FP
R
thJA
R
thJA_FP
260 °C
T
sold
3)
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at T =25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
800
-
typ. max.
V
V
=0V, I =0.25mA
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =11A
870
-
V
GS
D
(BR)DS
I =680µA, V =V
2.1
3
3.9
Gate threshold voltage
Zero gate voltage drain current
V
I
D
GS DS
GS(th)
V
=800V, V =0V,
DS GS
µA
DSS
T =25°C
-
-
-
0.5
-
-
20
200
100 nA
j
T =150°C
j
V
V
=20V, V =0V
Gate-source leakage current
I
GS
GS
DS
GSS
=10V, I =7.1A
Drain-source on-state resistance R
Ω
D
DS(on)
T =25°C
-
-
-
0.39
1.1
0.7
0.45
-
j
T =150°C
j
R
f=1MHz, open drain
-
Gate input resistance
G
Rev. 2.4
Page 2
2005-08-24
INFINEON [ Infineon ]
