SPP11N80C3
SPA11N80C3
9 Typ. drain-source on resistance
=f(I )
10 Drain-source on-state resistance
R = f (T )
DS(on)
R
DS(on)
D
j
parameter: T =150°C, V
parameter : I = 7.1 A, V = 10 V
j
GS
D
GS
SPP11N80C3
2.6
Ω
3
Ω
4V
2.2
2
2.6
4.5V
5V
2.4
2.2
2
1.8
1.6
1.4
1.2
1
5.5V
1.8
1.6
1.4
1.2
1
6V
0.8
0.6
0.4
0.2
0
6.5V
20V
98%
typ
0.8
°C
0
2
4
6
8
10 12 14
18
-60
-20
20
60
100
180
A
I
T
D
j
11 Typ. transfer characteristics
I = f ( V ); V ≥ 2 x I x R
12 Typ. gate charge
= f (Q
V
)
Gate
D
GS
DS
D
DS(on)max
GS
parameter: t = 10 µs
parameter: I = 11 A pulsed
p
D
SPP11N80C3
35
16
25°C
V
A
12
25
20
15
10
5
0,2 VDS max
0,8 VDS max
10
8
150°C
6
4
2
0
0
0
2
4
6
8
10 12 14 16
20
V
V
GS
0
20
40
60
80
110
Gate
nC
Q
Rev. 2.4
Page 7
2005-08-24
INFINEON [ Infineon ]
