SPP11N80C3
SPA11N80C3
13 Forward characteristics of body diode
I = f (V )
14 Avalanche SOA
= f (t )
I
F
SD
AR
AR
parameter: T , tp = 10 µs
par.: T ≤ 150 °C
j
10 2
SPP11N80C3
11
A
A
9
8
7
6
5
4
3
2
10 1
T
=25°C
j(START)
10 0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
T
=125°C
j(START)
1
0
10 -1
0
0.4
0.8
1.2
1.6
2
2.4
3
10 -3 10 -2 10 -1 10 0 10 1 10 2
10 4
V
µs
AR
t
V
SD
15 Avalanche energy
= f (T )
16 Drain-source breakdown voltage
E
V
= f (T )
AS
j
(BR)DSS
j
par.: I = 2.2 A, V = 50 V
D
DD
SPP11N80C3
500
980
V
mJ
940
920
900
880
860
840
820
800
780
760
740
720
400
350
300
250
200
150
100
50
0
20
40
60
80
100
120
150
-60
-20
20
60
100
180
°C
°C
j
T
T
j
Rev. 2.4
Page 8
2005-08-24
INFINEON [ Infineon ]
