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IDT71321SA55J 参数 Datasheet PDF下载

IDT71321SA55J图片预览
型号: IDT71321SA55J
PDF下载: 下载PDF文件 查看货源
内容描述: HIGH -SPEED 2K ×8双端口静态对中断RAM [HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 16 页 / 255 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT7132SA/LA and IDT 7142SA/LA  
High Speed 2K x 8 Dual Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
Timing Waveform of Read Cycle No. 1, Either Side(1)  
tRC  
ADDRESS  
tAA  
tOH  
tOH  
DATAOUT  
PREVIOUS DATA VALID  
DATA VALID  
BUSYOUT  
2692 drw 07  
(2,3)  
BDDH  
t
Timing Waveform of Read Cycle No. 2, Either Side(1)  
tACE  
CE  
OE  
(3)  
(5)  
tHZ  
tAOE  
(5)  
HZ  
(4)  
t
tLZ  
VALID DATA  
DATAOUT  
(4)  
LZ  
(3)  
t
tPD  
tPU  
ICC  
CURRENT  
50%  
50%  
ISS  
2692 drw 08  
NOTES:  
1. R/W = VIH, CE = VIL, and is OE = VIL. Address is valid prior to the coincidental with CE transition LOW.  
2. tBDD delay is required only in the case where the opposite port is completing a write operation to the same address location. For simultaneous read operations, BUSY has  
no relationship to valid output data.  
3. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD.  
4. Timing depends on which signal is asserted last, OE or CE.  
5. Timing depends on which signal is de-asserted first, OE or CE.  
8