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IDT7005S35J 参数 Datasheet PDF下载

IDT7005S35J图片预览
型号: IDT7005S35J
PDF下载: 下载PDF文件 查看货源
内容描述: 高速8K ×8双端口静态RAM [HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM]
分类和应用:
文件页数/大小: 20 页 / 265 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT7005S/L
HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE
(5)
Symbol
WRITE CYCLE
t
WC
t
EW
t
AW
t
AS
t
WP
t
WR
t
DW
t
HZ
t
DH
t
WZ
t
OW
t
SWRD
t
SPS
Write Cycle Time
Chip Enable to End-of-Write
(3)
Address Valid to End-of-Write
Address Set-up Time
(3)
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time
(1, 2)
Data Hold Time
(4)
Write Enable to Output in High-Z
(1, 2)
Output Active from End-of-Write
(1, 2, 4)
15
12
12
0
12
0
10
0
0
5
5
10
10
17
12
12
0
12
0
10
0
0
5
5
10
10
20
15
15
0
15
0
15
0
0
5
5
12
12
25
20
20
0
20
0
15
0
0
5
5
15
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Parameter
IDT7005X15
Com'l. Only
Min.
Max.
IDT7005X17
Com'l. Only
Min.
Max.
IDT7005X20
Min.
Max.
IDT7005X25
Min.
Max.
Unit
SEM
Flag Write to Read Time
SEM
Flag Contention Window
IDT7005X35
Symbol
WRITE CYCLE
t
WC
t
EW
t
AW
t
AS
t
WP
t
WR
t
DW
t
HZ
t
DH
t
WZ
t
OW
t
SWRD
t
SPS
Write Cycle Time
Chip Enable to End-of-Write
(3)
Address Valid to End-of-Write
Address Set-up Time
(3)
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time
(1, 2)
Data Hold Time
(4)
IDT7005X55
Min.
55
45
45
0
40
0
30
0
0
5
5
Max.
25
25
Parameter
Min.
35
30
30
0
25
0
15
0
0
5
5
Max.
15
15
IDT7005X70
Mil. Only
Min.
Max.
70
50
50
0
50
0
40
0
0
5
5
30
30
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Enable to Output in High-Z
(1, 2)
Output Active from End-of-Write
(1, 2, 4)
SEM
Flag Write to Read Time
SEM
Flag Contention Window
NOTES:
2738 tbl 14
1. Transition is measured
±500mV
from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but is not production tested.
3. To access RAM,
CE
= V
IL
,
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL
. Either condition must be valid for the entire t
EW
time.
4. The specification for t
DH
must be met by the device supplying write data to the RAM under all operating conditions. Although t
DH
and t
OW
values will vary
over voltage and temperature, the actual t
DH
will always be smaller than the actual t
OW
.
5. "X" in part numbers indicates power rating (S or L).
6.06
9