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IDT7005S35J 参数 Datasheet PDF下载

IDT7005S35J图片预览
型号: IDT7005S35J
PDF下载: 下载PDF文件 查看货源
内容描述: 高速8K ×8双端口静态RAM [HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM]
分类和应用:
文件页数/大小: 20 页 / 265 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT7005S/L  
HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
DC ELECTRICAL CHARACTERISTICS OVER THE  
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE (VCC = 5.0V ± 10%)  
IDT7005S  
IDT7005L  
Symbol  
Parameter  
Input Leakage Current(1)  
Output Leakage Current  
Output Low Voltage  
Test Conditions  
VCC = 5.5V, VIN = 0V to VCC  
CE = VIH, VOUT = 0V to VCC  
IOL = 4mA  
Min.  
Max.  
10  
Min.  
Max.  
5
Unit  
µA  
|ILI|  
|ILO|  
VOL  
VOH  
10  
5
µA  
0.4  
0.4  
V
Output High Voltage  
IOH = -4mA  
2.4  
2.4  
V
NOTE:  
1. At Vcc < 2.0V input leakages are undefined.  
2738 tbl 08  
DC ELECTRICAL CHARACTERISTICS OVER THE  
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(1) (VCC = 5.0V ± 10%)  
7005X15  
Com'l. Only Com'l. Only  
Version Typ.(2) Max. Typ.(2) Max. Typ.(2) Max. Typ.(2) Max. Unit  
7005X17  
7005X20  
7005X25  
Test  
Symbol  
Parameter  
Condition  
ICC  
Dynamic Operating CE = VIL, Outputs Open  
MIL.  
COM.  
MIL.  
COM.  
MIL.  
S
L
160 370  
150 320  
155 340 mA  
145 280  
Current  
SEM = VIH  
(3)  
(Both Ports Active) f = fMAX  
S
L
170 310  
160 260  
170 310  
160 260  
160 290  
150 240  
155 265  
145 220  
ISB1 Standby Current  
CEL = CER = VIH  
(Both Ports — TTL SEMR = SEML = VIH  
S
L
20  
10  
90  
70  
16  
10  
80 mA  
65  
(3)  
Level Inputs  
f = fMAX  
S
L
20  
10  
60  
60  
20  
10  
60  
50  
20  
10  
60  
50  
16  
10  
60  
50  
(5)  
ISB2 Standby Current  
(One Port — TTL  
Level Inputs)  
CE"A"=VIL and CE"B"=VIH  
S
L
95  
85  
95  
85  
240  
210  
180  
150  
90  
80  
90  
80  
215 mA  
180  
Active Port Outputs Open  
(3)  
f = fMAX  
COM.  
S
L
105 190  
105 190  
95 160  
170  
SEMR = SEML > VIH  
95  
160  
140  
ISB3 Full Standby Current Both Ports CEL and  
(Both Ports — All  
CER > VCC - 0.2V(5)  
MIL.  
S
L
1.0  
0.2  
30  
10  
1.0  
0.2  
30 mA  
10  
CMOS Level Inputs) VIN > VCC - 0.2V or  
VIN < 0.2V, f = 0(4)  
COM.  
S
L
1.0  
0.2  
15  
5
1.0  
0.2  
15  
5
1.0  
0.2  
15  
5
1.0  
0.2  
15  
5
SEMR = SEML > VCC - 0.2V  
ISB4 Full Standby Current CE"B" < 0.2V and  
(One Port — All CE"B" > VCC - 0.2v  
MIL.  
S
90  
225  
85  
200 mA  
CMOS Level Inputs) SEMR = SEML > VCC - 0.2V  
VIN > VCC - 0.2V or  
L
80  
90  
200  
155  
75  
85  
170  
145  
COM  
.
S
100 170  
100 170  
VIN < 0.2V  
Active Port Outputs Open,  
f = fMAX  
L
90 140  
90 140  
80  
130  
75  
120  
(3)  
NOTES:  
1. "X" in part numbers indicates power rating (S or L).  
2. VCC = 5V, TA = +25°C, and are not production tested. ICC DC = 120mA typ.)  
2738 tbl 09  
3. At f = fMAX, address and I/O'S are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions” of input levels of GND to 3V.  
4. f = 0 means no address or control lines change.  
5. Port "A"may be either left or right port. Port "B" is the port opposite port "A".  
6.06  
5