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IS61C632A-8TQ 参数 Datasheet PDF下载

IS61C632A-8TQ图片预览
型号: IS61C632A-8TQ
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×32同步流水式静态RAM [32K x 32 SYNCHRONOUS PIPELINED STATIC RAM]
分类和应用: 内存集成电路静态存储器时钟
文件页数/大小: 16 页 / 486 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IS61C632A  
INTERLEAVED BURST ADDRESS TABLE (MODE = VCCQ or No Connect)  
External Address  
1st Burst Address  
2nd Burst Address  
3rd Burst Address  
A1 A0  
A1 A0  
A1 A0  
A1 A0  
00  
01  
10  
11  
01  
00  
11  
10  
10  
11  
00  
01  
11  
10  
01  
00  
LINEAR BURST ADDRESS TABLE (MODE = GNDQ)  
0,0  
A1, A0= 1,1  
0,1  
1,0  
ABSOLUTE MAXIMUM RATINGS(1)  
Symbol Parameter  
Value  
–10 to +85  
–55 to +150  
1.8  
Unit  
°C  
°C  
W
TBIAS  
TSTG  
PD  
Temperature Under Bias  
Storage Temperature  
Power Dissipation  
IOUT  
Output Current (per I/O)  
100  
mA  
V
V
VIN, VOUT Voltage Relative to GND for I/O Pins  
VIN  
–0.5 to VCCQ + 0.3  
–0.5 to 5.5  
Voltage Relative to GND for  
for Address and Control Inputs  
Notes:  
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause  
permanent damage to the device. This is a stress rating only and functional operation of the  
device at these or any other conditions above those indicated in the operational sections of  
this specification is not implied. Exposure to absolute maximum rating conditions for  
extended periods may affect reliability.  
2. This device contains circuity to protect the inputs against damage due to high static voltages  
or electric fields; however, precautions may be taken to avoid application of any voltage  
higher than maximum rated voltages to this high-impedance circuit.  
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.  
Integrated Circuit Solution Inc.  
5
SSR001-0B