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IC61LV256-12JG 参数 Datasheet PDF下载

IC61LV256-12JG图片预览
型号: IC61LV256-12JG
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8海特高速SRAM与3.3V [32K x 8 Hight Speed SRAM with 3.3V]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 124 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
 浏览型号IC61LV256-12JG的Datasheet PDF文件第1页浏览型号IC61LV256-12JG的Datasheet PDF文件第2页浏览型号IC61LV256-12JG的Datasheet PDF文件第3页浏览型号IC61LV256-12JG的Datasheet PDF文件第4页浏览型号IC61LV256-12JG的Datasheet PDF文件第5页浏览型号IC61LV256-12JG的Datasheet PDF文件第6页浏览型号IC61LV256-12JG的Datasheet PDF文件第7页浏览型号IC61LV256-12JG的Datasheet PDF文件第9页  
IC61LV256  
WRITE CYCLE NO. 2(WE Controlled, OE is HIGH During Write Cycle) (1,2)  
t
WC  
ADDRESS  
OE  
VALID ADDRESS  
t
HA  
LOW  
CE  
t
AW  
t
PWE1  
WE  
t
SA  
t
HZWE  
t
LZWE  
HIGH-Z  
DATA UNDEFINED  
DOUT  
t
SD  
t
HD  
DATAIN VALID  
DIN  
WRITE CYCLE NO. 3(WE Controlled, OE is LOW During Write Cycle) (1)  
t
WC  
ADDRESS  
VALID ADDRESS  
t
HA  
LOW  
LOW  
OE  
CE  
t
t
AW  
t
PWE2  
WE  
t
SA  
HZWE  
t
LZWE  
HIGH-Z  
DATA UNDEFINED  
DOUT  
t
SD  
t
HD  
DATAIN VALID  
DIN  
Notes:  
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,  
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling  
edge of the signal that terminates the Write.  
2. I/O will assume the High-Z state if OE > VIH.  
8
Integrated Circuit Solution Inc.  
AHSR027-0B 11/28/2003