IC61LV256
32K x 8 HIGH SPEED
CMOS STATIC RAM
DESCRIPTION
FEATURES
The ICSI IC61LV256 is a very high-speed, low power,
32,768-word by 8-bit static RAM. It is fabricated using ICSI's
high-performance CMOS technology. This highly reliable pro-
cess coupled with innovative circuit design techniques, yields
access times as fast as 8 ns maximum.
• High-speed access times:
-- 8, 10, 12, 15 ns
• Automatic power-down when chip is deselected
• CMOS low power operation
-- 345 mW (max.) operating
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation is reduced to
600 µW (typical) with CMOS input levels.
-- 7 mW (max.) CMOS standby
• TTL compatible interface levels
• Single 3.3V power supply
Easy memory expansion is provided by using an active LOW
Chip Enable (CE). The active LOW Write Enable (WE) con-
trols both writing and reading of the memory.
• Fully static operation: no clock or refresh
required
• Three-state outputs
The IC61LV256 is available in the JEDEC standard 28-pin,
300mil SOJ and the 8*13.4mm TSOP-1 package.
FUNCTIONAL BLOCK DIAGRAM
256 X 1024
MEMORY ARRAY
A0-A14
DECODER
VCC
GND
I/O
DATA
COLUMN I/O
I/O0-I/O7
CIRCUIT
CE
CONTROL
CIRCUIT
OE
WE
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
2
Integrated Circuit Solution Inc.
AHSR027-0B 11/28/2003
ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
