iC-ML
HALL Position Sensor / Encoder
Rev A3, Page 5/17
ELECTRICAL CHARACTERISTICS
Operating conditions: VDD = 5 V ±10 % , Tj = -40 ... 125 °C, unless otherwise noted
Item Symbol
No.
Parameter
Conditions
Unit
Min.
Typ.
Max.
60
604 tf()
Fall time
CL() = 50 pF
ns
µA
V
605 Ilk()
606 Vc()hi
607 Vc()lo
Leackage current
Clamp voltage high
Clamp voltage low
NEN = high, V() = 0 ... VDD
Vc()hi = V() - VDD, NEN = high, I() = 4 mA
NEN = high, I() = -4 mA
-5
5
0.3
-1.5
1.6
-0.3
V
Digital inputs: A, B, C, D
701 Vt()hi
702 Vt()lo
703 Vt()hys
704 Ipd()
Threshold voltage high
2
V
V
Threshold voltage low
Hysterese
0.8
300
10
Vt()hys = Vt()hi - Vt()lo
V() = 1 V...VDD
mV
µA
Pull-down current
30
50
Analog outputs: A, B, C, D
801 SR
Slew Rate
2
500
-1
V/µs
kHz
mA
kΩ
802 fhc()
803 I()
Cut off frequency
Output current
1
804 R()eda
805 R()ada
Input resistance DA-converter
between pin B and pin C
6
8
10
Output resistance DA-converter at pin A
100
kΩ
p
p
p
sens
sens
sens
y
sens
0%
twhi()/T
50%
AArel
center of chip
Figure 1: Location of HALL sensors on die
0%
h
x
sens
dis
100%
20
AArel
Figure 3: Definition of relative angular error
y
dis
f
dis
center of chip
1
Figure 2: Position of die in TSSOP20 package
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