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IC-MFN 参数 Datasheet PDF下载

IC-MFN图片预览
型号: IC-MFN
PDF下载: 下载PDF文件 查看货源
内容描述: 8折FAIL -SAFE N沟道场效应管驱动器 [8-FOLD FAIL-SAFE N-FET DRIVER]
分类和应用: 驱动器
文件页数/大小: 13 页 / 197 K
品牌: ICHAUS [ IC-HAUS GMBH ]
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iC-MFN  
8-FOLD FAIL-SAFE N-FET DRIVER  
Rev A2, Page 11/13  
APPLICATION NOTES  
Driving an N-channel MOSFET  
One typical field of application for iC-MFN is in the op-  
eration of N-FETs with microprocessor output signals,  
as shown in Figure 8.  
Vth(FET)  
(1)  
tt0..t1[µs] = Ciss@(Vds = hi)×  
Isc(OUTx)hi  
VB  
iC−MFN  
IN1  
IN2  
IN3  
IN4  
IN5  
IN6  
IN7  
IN8  
OUT1  
OUT2  
OUT3  
OUT4  
OUT5  
OUT6  
OUT7  
OUT8  
VB  
(2)  
tt1..t2[µs] = Crss@(Vds = hi)×  
3.3V  
RL  
Isc(OUTx)hi  
VD  
Microcontroller  
Vr(OUTx)Vth(FET)  
Isc(OUTx)hi  
tt2..t3[µs] = Ciss@(Vds = lo)×  
EN5  
EN10  
ENFS  
NOK  
(3)  
VBR  
VB  
GNDR  
GND  
VB  
Supply, Ground and  
Temperature Monitor  
ton = tt0..t1 +tt1..t2 +tt2..t3  
(4)  
Ciss = Cgs +Cgd = voltage dependent gate-source and  
gate-drain capacitor [nF]  
Figure 8: Driving an N-channel MOSFET  
Crss = Cgd = voltage dependent gate-drain capacitor  
[nF]  
Isc(OUTx)lo = short circuit current lo at OUTx [mA]  
tt0..t1 = dead time [µs]  
tt1..t2 = slope time at drain (Miller-Plateau) [µs]  
tt2..t3 = time to reach static gate voltage [µs]  
ton = overall turn on time [µs]  
VB = power supply VB [V]  
Vr(OUTx) = configured static turn on voltage at OUTx  
[V]  
Slowly switching of a transistor is done with a current  
limited driver. Figure 9 shows the different phases of  
a turn on process with resitive load. In Section t0 to  
t1 the gate of the transistors is loaded to the threshold  
voltage Vth(FET) and is a dead time. In section t1 to t2  
the gate voltage keeps nearly constant (miller-plateau)  
during the drain voltage slope. The slew rate depends  
on the current of the driver and the gate-drain capaci-  
tor of the transistor. In section t2 to t3 the gate voltage  
reach the static value. The transistor thus goes low  
ohmic and minimizes the power dissipation. The equa-  
tions 1 to 4 are simplified and give an estimation of the  
timing on the basis of data from the specifications of  
the device iC-MFN and the used transistor. The turn off  
looks similar to the turn on but with reverse run trough.  
Vth(FET) = threshold of the transistor [V]  
V(OUTx)  
Vr()  
Vth(FET)  
t
VD  
VB  
t
t0  
t1  
t2  
t3  
Figure 9: On switching of a transistor