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IC-GFQFN24 参数 Datasheet PDF下载

IC-GFQFN24图片预览
型号: IC-GFQFN24
PDF下载: 下载PDF文件 查看货源
内容描述: 收发器 [TRANSCEIVER]
分类和应用:
文件页数/大小: 26 页 / 877 K
品牌: ICHAUS [ IC-HAUS GMBH ]
 浏览型号IC-GFQFN24的Datasheet PDF文件第3页浏览型号IC-GFQFN24的Datasheet PDF文件第4页浏览型号IC-GFQFN24的Datasheet PDF文件第5页浏览型号IC-GFQFN24的Datasheet PDF文件第6页浏览型号IC-GFQFN24的Datasheet PDF文件第8页浏览型号IC-GFQFN24的Datasheet PDF文件第9页浏览型号IC-GFQFN24的Datasheet PDF文件第10页浏览型号IC-GFQFN24的Datasheet PDF文件第11页  
iC-GF  
TRANSCEIVER  
Rev C1, Page 7/26  
ELECTRICAL CHARACTERISTICS  
Operating Conditions: VBO = 9...30 V (referenced to VN), Tj = -40...125 °C, RSET = 6.8 k±1%, unless otherwise stated  
Item Symbol  
No.  
Parameter  
Conditions  
Unit  
Min.  
Typ.  
Max.  
Total Device  
001 VBO  
Permissible Supply Voltage  
Supply Current in VBO  
Referenced to VN  
9
24  
30  
V
002 I(VBO)  
No load, VH conected to VBR,  
4.5  
mA  
I(QP1) = I(QP2) = 0, QPx switched on  
003  
Vs(VBR)  
Saturation Voltage at VBR  
referenced to VBO  
I(VBR) = 20mA  
I(VBR) = 50mA  
0.8  
1
V
V
004 VH  
Permissible Voltage at VH  
Supply Current in VH  
VH > VHnr  
8.4  
1.5  
30  
3
V
005 I(VH)  
VH = 8 V, no load, I(VCC) = I(VCC3) = 0,  
V(OEN) = hi  
mA  
006 Vc()hi  
007 Vc()lo  
008 Vc()hi  
009 Vc()lo  
010 Vc()hi  
Clamp Voltage hi at VBO, VBR  
vs. VN  
I() = 10 mA  
36  
36  
36  
V
V
V
V
V
Clamp Voltage lo at VBO, VBR  
vs. VN  
I() = -10 mA  
-36  
-36  
Clamp Voltage hi at QN1, QN2  
vs. VN  
I() = 1 mA, VBO > VN  
I() = -1 mA, VBO > VN  
I() = 1 mA  
Clamp Voltage lo at QP1, QP2  
vs. VBO  
Clamp Voltage hi at VN, VBO,  
VBR, QP1, QN1, QP2, QN1, CFI,  
VH, VHL vs. lowest voltage of  
VN, VBO, VBR, QP1, QN1, QP2,  
QN1, CFI, VH, VHL  
011 Vc()hi  
012 Vc()lo  
013 RGND  
Clamp Voltage hi at VCC, VCC3, I() = 1 mA  
ISET, INV1, IN1, IN2, QCFG1,  
QCFG2, OEN, CFO, CFP, NOVL,  
NUVD  
7
V
V
Clamp Voltage lo at VCC, VCC3, I() = -1 mA  
ISET, INV1, IN1, IN2, QCFG1,  
QCFG2, OEN, CFO, CFP, NOVL,  
NUVD  
-0.5  
7
Resistance GND to VN  
3
Low-Side Switch QN1, QN2  
101  
Vs()lo  
Saturation Voltage lo at QN1,  
QN2 vs. VN  
RSET = 5.1 k;  
I() = 100 mA  
I() = 50 mA  
1.2  
0.65  
0.3  
V
V
V
I() = 10 mA  
102  
Isc()lo  
Short-Circuit Current lo in QN1,  
QN2  
RSET = 6.8 k, V() = 3 V...VBO  
RSET = 5.1 k, V() = 4 V...VBO  
100  
160  
140  
200  
180  
260  
mA  
mA  
103 Vol()on  
104 Vol()off  
105 Vol()hys  
Overload Detection Threshold on QN1, QN2 lo hi; referenced to GND  
Overload Detection Threshold off QN1, QN2 hi lo; referenced to GND  
1.5  
1.5  
0.1  
2.1  
1.8  
V
V
V
Overload Detection Threshold  
Hysteresis  
Vol()hys = Vol()on Vol()off  
106  
llk()  
Leakage Current at QN1, QN2  
OEN = lo;  
V(QN1, QN2) = VBO...VBO + 6 V  
V(QN1, QN2) = 0...VBO  
V(QN1, QN2) = -6...0 V  
V(QN1, QN2) = VBO 36 V...-6 V  
0
0
-70  
-200  
50  
50  
0
µA  
µA  
µA  
µA  
0
107 SR()  
108 Imax()  
109 Ir()  
Slew Rate (switch off on)  
VBO = 30 V, Cl = 2.2 nF  
45  
V/µs  
mA  
µA  
Maximum Current in QN1, QN2 V(ISET) = 0 V, QNx > 3 V  
170  
-300  
300  
1.5  
300  
440  
Reverse Current in QN1, QN2  
Excitation Current  
Excitation Time  
QNx activated; V(QNx) = -6 V  
NEXC = 0 (see Fig. 9)  
110 Iexc()  
111 texc  
112 tdead  
540  
3.5  
2.8  
mA  
µs  
NEXC = 0 (see Fig. 9)  
Dead Time  
Push-pull configuration, QNx activation delay  
after QPx deactivation (see Fig. 9)  
1.2  
µs  
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