iC-GF
TRANSCEIVER
Rev C1, Page 7/26
ELECTRICAL CHARACTERISTICS
Operating Conditions: VBO = 9...30 V (referenced to VN), Tj = -40...125 °C, RSET = 6.8 kΩ ±1%, unless otherwise stated
Item Symbol
No.
Parameter
Conditions
Unit
Min.
Typ.
Max.
Total Device
001 VBO
Permissible Supply Voltage
Supply Current in VBO
Referenced to VN
9
24
30
V
002 I(VBO)
No load, VH conected to VBR,
4.5
mA
I(QP1) = I(QP2) = 0, QPx switched on
003
Vs(VBR)
Saturation Voltage at VBR
referenced to VBO
I(VBR) = 20mA
I(VBR) = 50mA
0.8
1
V
V
004 VH
Permissible Voltage at VH
Supply Current in VH
VH > VHnr
8.4
1.5
30
3
V
005 I(VH)
VH = 8 V, no load, I(VCC) = I(VCC3) = 0,
V(OEN) = hi
mA
006 Vc()hi
007 Vc()lo
008 Vc()hi
009 Vc()lo
010 Vc()hi
Clamp Voltage hi at VBO, VBR
vs. VN
I() = 10 mA
36
36
36
V
V
V
V
V
Clamp Voltage lo at VBO, VBR
vs. VN
I() = -10 mA
-36
-36
Clamp Voltage hi at QN1, QN2
vs. VN
I() = 1 mA, VBO > VN
I() = -1 mA, VBO > VN
I() = 1 mA
Clamp Voltage lo at QP1, QP2
vs. VBO
Clamp Voltage hi at VN, VBO,
VBR, QP1, QN1, QP2, QN1, CFI,
VH, VHL vs. lowest voltage of
VN, VBO, VBR, QP1, QN1, QP2,
QN1, CFI, VH, VHL
011 Vc()hi
012 Vc()lo
013 RGND
Clamp Voltage hi at VCC, VCC3, I() = 1 mA
ISET, INV1, IN1, IN2, QCFG1,
QCFG2, OEN, CFO, CFP, NOVL,
NUVD
7
V
V
Ω
Clamp Voltage lo at VCC, VCC3, I() = -1 mA
ISET, INV1, IN1, IN2, QCFG1,
QCFG2, OEN, CFO, CFP, NOVL,
NUVD
-0.5
7
Resistance GND to VN
3
Low-Side Switch QN1, QN2
101
Vs()lo
Saturation Voltage lo at QN1,
QN2 vs. VN
RSET = 5.1 kΩ;
I() = 100 mA
I() = 50 mA
1.2
0.65
0.3
V
V
V
I() = 10 mA
102
Isc()lo
Short-Circuit Current lo in QN1,
QN2
RSET = 6.8 kΩ, V() = 3 V...VBO
RSET = 5.1 kΩ, V() = 4 V...VBO
100
160
140
200
180
260
mA
mA
103 Vol()on
104 Vol()off
105 Vol()hys
Overload Detection Threshold on QN1, QN2 lo → hi; referenced to GND
Overload Detection Threshold off QN1, QN2 hi → lo; referenced to GND
1.5
1.5
0.1
2.1
1.8
V
V
V
Overload Detection Threshold
Hysteresis
Vol()hys = Vol()on − Vol()off
106
llk()
Leakage Current at QN1, QN2
OEN = lo;
V(QN1, QN2) = VBO...VBO + 6 V
V(QN1, QN2) = 0...VBO
V(QN1, QN2) = -6...0 V
V(QN1, QN2) = VBO − 36 V...-6 V
0
0
-70
-200
50
50
0
µA
µA
µA
µA
0
107 SR()
108 Imax()
109 Ir()
Slew Rate (switch off → on)
VBO = 30 V, Cl = 2.2 nF
45
V/µs
mA
µA
Maximum Current in QN1, QN2 V(ISET) = 0 V, QNx > 3 V
170
-300
300
1.5
300
440
Reverse Current in QN1, QN2
Excitation Current
Excitation Time
QNx activated; V(QNx) = -6 V
NEXC = 0 (see Fig. 9)
110 Iexc()
111 texc
112 tdead
540
3.5
2.8
mA
µs
NEXC = 0 (see Fig. 9)
Dead Time
Push-pull configuration, QNx activation delay
after QPx deactivation (see Fig. 9)
1.2
µs