iC-GF
TRANSCEIVER
Rev C1, Page 7/26
ELECTRICAL CHARACTERISTICS
Operating Conditions: VBO = 9...30 V (referenced to VN), Tj = -40...125 °C, RSET = 6.8 kΩ ±1%, unless otherwise stated
Item
No.
001
002
003
004
005
006
007
008
009
010
Symbol
Parameter
Conditions
Min.
VBO
I(VBO)
Vs(VBR)
VH
I(VH)
Vc()hi
Vc()lo
Vc()hi
Vc()lo
Vc()hi
Permissible Supply Voltage
Supply Current in VBO
Saturation Voltage at VBR
referenced to VBO
Permissible Voltage at VH
Supply Current in VH
Clamp Voltage hi at VBO, VBR
vs. VN
Clamp Voltage lo at VBO, VBR
vs. VN
Clamp Voltage hi at QN1, QN2
vs. VN
Clamp Voltage lo at QP1, QP2
vs. VBO
Referenced to VN
No load, VH conected to VBR,
I(QP1) = I(QP2) = 0, QPx switched on
I(VBR) = 20mA
I(VBR) = 50mA
VH > VHnr
VH = 8 V, no load, I(VCC) = I(VCC3) = 0,
V(OEN) = hi
I() = 10 mA
I() = -10 mA
I() = 1 mA, VBO > VN
I() = -1 mA, VBO > VN
36
36
-36
8.4
1.5
36
-36
9
Typ.
24
Max.
30
4.5
0.8
1
30
3
V
mA
V
V
V
mA
V
V
V
V
V
Unit
Total Device
Clamp Voltage hi at VN, VBO,
I() = 1 mA
VBR, QP1, QN1, QP2, QN1, CFI,
VH, VHL vs. lowest voltage of
VN, VBO, VBR, QP1, QN1, QP2,
QN1, CFI, VH, VHL
Clamp Voltage hi at VCC, VCC3, I() = 1 mA
ISET, INV1, IN1, IN2, QCFG1,
QCFG2, OEN, CFO, CFP, NOVL,
NUVD
Clamp Voltage lo at VCC, VCC3, I() = -1 mA
ISET, INV1, IN1, IN2, QCFG1,
QCFG2, OEN, CFO, CFP, NOVL,
NUVD
Resistance GND to VN
RSET = 5.1 kΩ;
I() = 100 mA
I() = 50 mA
I() = 10 mA
RSET = 6.8 kΩ, V() = 3 V...VBO
RSET = 5.1 kΩ, V() = 4 V...VBO
011
Vc()hi
7
V
012
Vc()lo
-0.5
V
013
RGND
3
7
Ω
Low-Side Switch QN1, QN2
101 Vs()lo
Saturation Voltage lo at QN1,
QN2 vs. VN
1.2
0.65
0.3
100
160
1.5
1.5
0.1
140
200
180
260
2.1
1.8
V
V
V
mA
mA
V
V
V
102
103
104
105
106
Isc()lo
Vol()on
Vol()off
Vol()hys
llk()
Short-Circuit Current lo in QN1,
QN2
Overload Detection Threshold on QN1, QN2 lo
→
hi; referenced to GND
Overload Detection Threshold off QN1, QN2 hi
→
lo; referenced to GND
Overload Detection Threshold
Hysteresis
Leakage Current at QN1, QN2
Vol()hys = Vol()on
−
Vol()off
OEN = lo;
V(QN1, QN2) = VBO...VBO + 6 V
V(QN1, QN2) = 0...VBO
V(QN1, QN2) = -6...0 V
V(QN1, QN2) = VBO
−
36 V...-6 V
VBO = 30 V, Cl = 2.2 nF
V(ISET) = 0 V, QNx > 3 V
QNx activated; V(QNx) = -6 V
NEXC = 0 (see Fig. 9)
NEXC = 0 (see Fig. 9)
Push-pull configuration, QNx activation delay
after QPx deactivation (see Fig. 9)
0
0
-70
-200
170
-300
300
1.5
1.2
300
50
50
0
0
45
440
540
3.5
2.8
µA
µA
µA
µA
V/µs
mA
µA
mA
µs
µs
107
108
109
110
111
112
SR()
Imax()
Ir()
Iexc()
texc
tdead
Slew Rate (switch off
→
on)
Maximum Current in QN1, QN2
Reverse Current in QN1, QN2
Excitation Current
Excitation Time
Dead Time
ICHAUS [ IC-HAUS GMBH ]
