iC-GF
TRANSCEIVER
Rev C1, Page 10/26
ELECTRICAL CHARACTERISTICS
Operating Conditions: VBO = 9...30 V (referenced to VN), Tj = -40...125 °C, RSET = 6.8 kΩ ±1%, unless otherwise stated
Item Symbol
No.
Parameter
Conditions
Unit
µA
Min.
Typ.
Max.
807 Ipd(CFI)
Pull-Down Current at CFI
DEFAULT mode: CFP = lo, V(CFI) = 3 V...VBR
SPI mode: POL = 0, ENPUD = 1
40
300
808 tpcf
Propagation Delay
CFI → CFO/RX
V(CFO/RX) = 10 ↔ 90%
2.4
10
µs
809 Vs()lo
810 Isc()lo
Saturation Voltage lo at CFO/RX Open collector mode, I(CFO/RX) = 1.0 mA
0.4
25
V
Short Circuit Current lo in
CFO/RX
Open collector mode,
V(CFO/RX) = 0.4 V...VCC
1.2
-10
mA
811 Ilk()
Leakage Current at CFO/RX
Open collector mode, V(CFO/RX) = 0 V...VCC,
CFO/RX = off
10
2
µA
V
812 Vt(CFP)hi Input Threshold Voltage hi at
CFP
813 Vt(CFP)lo Input Threshold Voltage lo at
CFP
0.8
V
814 Vt(CFP)hys Hysteresis at CFP
Vt(CFP)hys = Vt(CFP)hi − Vt(CFP)lo
V(CFP) = 0.4 V...Vt(CFP)lo
V(CFP) > Vt(CFP)hi
200
280
mV
815
Ipd(CFP) Pull-Down Current at CFP
30
10
168
40
µA
µA
816 tsup(CFI) Permissible Spurious Pulse
Width at CFI
No activity triggered, DEFAULT mode or SPI
mode with FCFI(1:0) = 01
2.5
µs
µs
µs
817 ttrig(CFI) Required Pulse Width at CFI
Activity triggered, DEFAULT mode or SPI mode
with FCFI(1:0) = 01
6
818 tsup(CFP) Permissible Spurious Pulse
Width at CFP
No activity triggered
5
819 ttrig(CFP) Required Pulse Width at CFP
Activity triggered
12
20
µs
820 Ipd(CFI)+ Pull-Down Current at CFI plus
V(CFI) = 3 V...VBR, OEN = lo;
DEFAULT mode: CFP = lo
µA
llk(QPx)
leakage current at QPx
SPI mode: POL = 0, ENPUD = 1
821 Vs(RX)hi Saturation Voltage high at RX
SPI mode, ENOD = 0, I(RX) = -2 mA,
Vs(RX)hi = VCC3 − V(RX)
SPI mode, ENOD = 0, I(RX) = 2 mA
0.4
0.4
V
822 Vs(RX)lo Saturation Voltage low at RX
823 Isc(RX)hi Short Circuit current hi in RX
V
SPI mode, ENOD = 0,
-40
mA
V(RX) = 0...VCC3 − 0.4 V
824 Isc(RX)lo Short Circuit current lo in RX
SPI mode, ENOD = 0, V(RX) = 0.4 V...VCC3
90
22
mA
ns
825 tr(RX)
Rise Time at RX
SPI mode, ENOD = 0, CL(RX) = 30 pF,
0 → 90%VCC3
SPI mode, ENOD = 0, CL(RX) = 30 pF,
826 tf(RX)
Fall Time at RX
22
ns
100 → 10%VCC3
Step Down Converter VHL, VH
901 VHn
Nominal Voltage at VH
LVH = 22 µH, Ri(LVH) < 1.1 Ω, CVH = 1 µF,
I(VH) = 0...50 mA
6.3
6.3
6.7
7.3
7.4
8.4
V
V
902 VHnr
Nominal Voltage at VH, LVH re- R = 170 Ω, I(VH) = 0...10 mA
placed by a resistor
903 Ia(VHL)
904 Va(VH)
max. DC Cut-Off Current in VHL
Cut-Off Voltage at VH
-200
6.5
mA
V
Va(VH) > VHn
8.4
906
Vs(VHL)
Saturation Voltage at VHL vs.
VBR
I(VHL) = -50 mA
I(VHL) = -150 mA
0.5
1.5
1.1
3.0
V
V
907
Vf(VHL)
Saturation Voltage at VHL vs.
GND
Vf(VHL) = V(GND) − V(VHL);
I(VHL) = -50 mA
0.6
1.7
1.5
2.9
V
V
I(VHL) = -150 mA
908 Ilk(VHL)
Leakage Current at VHL
VHL = lo, V(VHL) = V(VH)
-20
70
20
µA
%
909 ηVH
Efficiency of VH switching regula- I(VH) = 50 mA, Ri(LVH) < 1.1 Ω,
tor V(VBR) = 12...30 V
ICHAUS [ IC-HAUS GMBH ]
