iC-GF
TRANSCEIVER
Rev C1, Page 9/26
ELECTRICAL CHARACTERISTICS
Operating Conditions: VBO = 9...30 V (referenced to VN), Tj = -40...125 °C, RSET = 6.8 kΩ ±1%, unless otherwise stated
Item Symbol
No.
Parameter
Conditions
Unit
mV
µA
Min.
Typ.
Max.
603 Vt()hys
604 Ipd()
605 Ipd()
Hysteresis at IN1/TX, IN2/MOSI, Vt()hys = Vt()hi − Vt()lo
200
280
OEN, SCLK, NCS
Pull-Down Current at IN1/TX,
IN2/MOSI
V() > 0.4 V
10
168
Pull-Down Current at NCS, SCLK SPI mode, V() > 0.4 V
10
1
40
6
µA
µA
606 Ipd(OEN) Pull-Down Current at OEN
V(OEN) > 0.4 V
607 Vahi()
Input Threshold hi at QCFG1,
QCFG2, INV1
52
64
29
69
%VCC3
608 Vahi()hys Hysteresis hi at QCFG1, QCFG2,
INV1
3
24
3
7
34
7
%VCC3
%VCC3
%VCC3
%VCC3
609 Valo()
Input Threshold lo at QCFG1,
QCFG2, INV1
610 Valo()hys Hysteresis lo at QCFG1, QCFG2,
INV1
611 Voc()
Open Circuit Voltage at QCFG1,
QCFG2, INV1
42
46.5
51
612
Ri()
Internal Resistance at QCFG1,
QCFG2, INV1
Referenced to VCC3
Referenced to GND
40
40
85
85
190
190
kΩ
kΩ
613 tsup()
614 ttrig()
615 tsup()
616 ttrig()
617 tpio
Permissible Spurious Pulse
Width at IN1/TX, IN2, INV1/ESPI mode with FCFG(1:0) = 10
No activity triggered, DEFAULT mode or SPI
2.5
5
µs
µs
µs
µs
µs
Required Pulse Width at IN1/TX, Activity triggered, DEFAULT mode or SPI mode
IN2, INV1/ESPI
6
with FCFG(1:0) = 10
Permissible Spurious Pulse
Width at QCFG1, QCFG2, OEN mode with FCFG(1:0) = 10
No activity triggered, DEFAULT mode or SPI
Required Pulse Width at QCFG1, Activity triggered, DEFAULT mode or SPI mode
QCFG2, OEN
12
with FCFG(1:0) = 10
Propagation Delay
IN1 → QP1, QN1
IN2 → QP2, QN2
INV1 = low or high, DEFAULT mode or SPI
mode with FCFG(1:0) = 10
2.4
10
0.4
Error Output NOVL/NDIAG, NUVD/MISO
701 Vs()lo
Saturation Voltage lo at NOVL,
NUVD
DEFAULT mode, I() = 1.0 mA
SPI mode, I() = 1.0 mA
V
702 Vs()lo
703 Isc()lo
Saturation Voltage lo at NDIAG
0.4
25
V
Short Circuit Current lo in NOVL, DEFAULT mode, V() = 0.4 V...VCC
NUVD
1.2
mA
704 Isc()lo
705 Ilk()
Short Circuit Current lo in NDIAG SPI mode, V() = 0.4 V...VCC
1.2
-10
-10
25
10
10
0.4
mA
µA
µA
V
Leakage Current in NOVL, NUVD DEFAULT mode, V() = 0 V...VCC, no error
706 Ilk()
Leakage Current in NDIAG
SPI mode, V() = 0 V...VCC, no error
707 Vs()hi
Saturation Voltage high at MISO SPI mode, I(MISO) = -2 mA,
Vs(MISO)hi = VCC3 − V(MISO)
708 Vs()lo
709 Isc()hi
710 Isc()lo
711 tr(MISO)
Saturation Voltage low at MISO SPI mode, I(MISO) = 2 mA
0.4
V
Short Circuit current hi in MISO SPI mode, V(MISO) = 0...VCC3 − 0.4 V
Short Circuit current lo in MISO SPI mode, V(MISO) = 0.4 V...VCC3
-40
mA
mA
ns
90
22
Rise Time
SPI mode, Cl(MISO) = 30 pF,
0 → 90%VCC3
SPI mode, 100 → 10%VCC3
712 tf(MISO)
Fall Time
16
ns
Feedback Channel CFI to CFO/RX
801 Vt1(CFI)hi Input Threshold 1 hi at CFI
802 Vt1(CFI)lo Input Threshold 1 lo at CFI
803 Vt2(CFI)hi Input Threshold 2 hi at CFI
804 Vt2(CFI)lo Input Threshold 2 lo at CFI
VBR < 18 V
59
44
66
50
74
56
%VBR
VBR < 18 V
%VBR
VBR > 18 V
10.5
8.3
1
11.3
9
12
V
V
VBR > 18 V
10.5
805 Vt()hys
806 Ipu(CFI)
Hysteresis at CFI
Vt(CFI)hys = Vt(CFI)hi − Vt(CFI)lo
V
Pull-Up Current at CFI
DEFAULT mode: CFP = hi,
V(CFI) = 0...VBR − 3 V
-300
-40
µA
SPI mode: POL = 1, ENPUD = 1
ICHAUS [ IC-HAUS GMBH ]
