Preliminary Data Sheet
ICE4N65D
Capacitance
Drain-to-Source Breakdown Voltage vs. Junction Temperature
100000
10000
1000
100
1.2
1.1
ID = 1mA
Ciss
1.0
0.9
0.8
Coss
10
Crss
1
0
200
400
600
-50
-25
0
25
50
75
100 125 150
TJ - Junction Temperature (˚C)
VDS - Drain-to-Source Voltage (V)
Transient Thermal Response, Junction-to-Case
Maximum Rated Forward Biased Safe Operating Area
100
1.00
Single Pulse,
Tc = 25oC,
Tj=150oC,
VGS = 10V
0.5
0.2
10
0.1
0.10
0.01
0.00
10us
0.05
0.02
100us
1
1ms
Single Pulse
10ms
RDS(on) Limit
Package Limit
Thermal Limit
0.1
DC
0.01
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
t - Time (seconds)
SP-4N65D-000-0
11/22/2013
5
ICEMOS [ Icemos Technology ]
