Preliminary Data Sheet
ICE4N65D
Values
Unit
Parameter
Symbol
Conditions
Min
Typ
Max
Gate charge characteristics
Qgs
Gate to source charge
-
-
-
-
4.6
6.4
21
-
-
-
-
Qgd
nC
V
Gate to drain charge
Gate charge total
VDS=480 V, ID=4A,
VGS=0 to 10 V
Qg
Gate plateau voltage
Vplateau
5.5
Reverse Diode
VSD
trr
VGS=0V, IS=IF
-
-
-
-
V
ns
µC
A
Diode forward voltage
0.9
277
2.6
20
1.2
Reverse recovery time
-
-
-
VRR=480V, IS=IF,
diFIdt=100 A/µS
Reverse recovery charge
Peak reverse recovery current
Qrr
Irm
SP-4N65D-000-0
11/22/2013
3