Preliminary Data Sheet
ICE4N65D
Values
Unit
Parameter
Symbol
Conditions
Min
Typ Max
Thermal characteristics
Thermal resistance, junction-
case a
RthJC
RthJA
T sold
b
-
-
-
-
-
-
3.1
68
oC/W
oC
Thermal resistance, junction-
ambient a
leaded
Soldering temperature, wave
soldering only allowed at leads
1.6mm (0.063in.) from
case for 10 s
260
Electrical characteristics , at T=25 C, unless otherwise specified
°
j
Static characteristics
V
VGS=0 V, ID=250µA
VDS=VGS, ID=250µA
Drain-source breakdown voltage
Gate threshold voltage
650
2.1
700
3
-
(BR)DSS
V
VGS(th)
3.9
VDS=650V, VGS=0V,
Tj=25oC
-
-
0.1
1
Zero gate voltage drain current
Gate source leakage current
IDSS
µA
VDS=650V, VGS=0V,
Tj=150oC
-
-
100
100
IGSS
VGS=±20 V, VDS=0V
nA
-
-
VGS=10V, ID=2A,
Tj=25oC
0. 85 0.95
Drain-source
on-state resistance
RDS (on)
Ω
VGS=10V, ID=2A,
Tj=150oC
-
-
2.2
6
-
Gate resistance
RG
f=1 MHZ, open drain
-
Ω
Dynamic characteristics
Ciss
Coss
Crss
gfs
Input capacitance
-
-
-
-
-
-
-
-
635
365
6
-
-
-
-
-
-
-
-
VGS=0 V, VDS=25 V,
f=1 MHz
Output capacitance
pF
S
Reverse transfer capacitance
VDS>2*ID*RDS, ID=2A
Transconductance
Turn-on delay time
Rise time
7
td(on)
Tr
6
3.5
54
7
VDS=380V, VGS=10V,
ID=4A, RG=4Ω (External)
ns
Turn-off delay time
Fall time
td(off)
tf
SP-4N65D-000-0
11/22/2013
2
ICEMOS [ Icemos Technology ]
