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ICE4N65D 参数 Datasheet PDF下载

ICE4N65D图片预览
型号: ICE4N65D
PDF下载: 下载PDF文件 查看货源
内容描述: 增强型MOSFET [Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 9 页 / 718 K
品牌: ICEMOS [ Icemos Technology ]
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Preliminary Data Sheet  
ICE4N65D  
Values  
Unit  
Parameter  
Symbol  
Conditions  
Min  
Typ Max  
Thermal characteristics  
Thermal resistance, junction-  
case a  
RthJC  
RthJA  
T sold  
b
-
-
-
-
-
-
3.1  
68  
oC/W  
oC  
Thermal resistance, junction-  
ambient a  
leaded  
Soldering temperature, wave  
soldering only allowed at leads  
1.6mm (0.063in.) from  
case for 10 s  
260  
Electrical characteristics , at T=25 C, unless otherwise specified  
°
j
Static characteristics  
V
VGS=0 V, ID=250µA  
VDS=VGS, ID=250µA  
Drain-source breakdown voltage  
Gate threshold voltage  
650  
2.1  
700  
3
-
(BR)DSS  
V
VGS(th)  
3.9  
VDS=650V, VGS=0V,  
Tj=25oC  
-
-
0.1  
1
Zero gate voltage drain current  
Gate source leakage current  
IDSS  
µA  
VDS=650V, VGS=0V,  
Tj=150oC  
-
-
100  
100  
IGSS  
VGS=±20 V, VDS=0V  
nA  
-
-
VGS=10V, ID=2A,  
Tj=25oC  
0. 85 0.95  
Drain-source  
on-state resistance  
RDS (on)  
VGS=10V, ID=2A,  
Tj=150oC  
-
-
2.2  
6
-
Gate resistance  
RG  
f=1 MHZ, open drain  
-
Dynamic characteristics  
Ciss  
Coss  
Crss  
gfs  
Input capacitance  
-
-
-
-
-
-
-
-
635  
365  
6
-
-
-
-
-
-
-
-
VGS=0 V, VDS=25 V,  
f=1 MHz  
Output capacitance  
pF  
S
Reverse transfer capacitance  
VDS>2*ID*RDS, ID=2A  
Transconductance  
Turn-on delay time  
Rise time  
7
td(on)  
Tr  
6
3.5  
54  
7
VDS=380V, VGS=10V,  
ID=4A, RG=4(External)  
ns  
Turn-off delay time  
Fall time  
td(off)  
tf  
SP-4N65D-000-0  
11/22/2013  
2