Preliminary Data Sheet
ICE4N65D
Transfer Characteristics
Output Characteristics
12
10
8
12
10
8
VGS=10 to 7V
6V
6
6
5V
4
4
TJ = 150˚C
2
2
25˚C
0
0
0
2
4
6
8
10
0
5
10
15
20
12
25
VGS - Gate-to-Source (V)
VDS - Drain-to-Source Voltage (V)
On Resistance vs Junction Temperature
On Resistance vs Drain Current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V
ID = 2A
VGS = 10V
0
2
4
6
8
10
-50
-25
0
25
50
75
100 125 150
ID - Drain current (A)
TJ - Junction Temperature (˚C)
Gate Charge
Gate Threshold Voltage vs Junction Temperature
10
9
8
7
6
5
4
3
2
1
0
1.4
1.3
1.2
1.1
VDS
=
480V
ID = 4A
ID = 250μA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-50
-25
0
25
50
75
100 125 150
0
5
10
15
20
TJ - Junction Temperature (˚C)
Qg - Total Gate Charge (nC)
SP-4N65D-000-0
11/22/2013
4
ICEMOS [ Icemos Technology ]
