IBMN612404GT3B
IBMN612804GT3B
Preliminary
128Mb Double Data Rate Synchronous DRAM
Absolute Maximum Ratings
Symbol
Parameter
Rating
−0.5 to VDDQ+ 0.5
−0.5 to +3.6
−0.5 to +3.6
−0.5 to +3.6
0 to +70
Units
V
V
, V
Voltage on I/O pins relative to V
IN
OUT
SS
V
Voltage on Inputs relative to V
V
IN
SS
V
Voltage on V supply relative to V
SS
V
DD
DD
V
Voltage on V
supply relative to V
SS
V
DDQ
DDQ
T
Operating Temperature (Ambient)
Storage Temperature (Plastic)
Power Dissipation
°C
°C
W
A
T
−55 to +150
1.0
STG
P
D
I
Short Circuit Output Current
50
mA
OUT
Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
06K0566.F39350B
1/01
Page 51 of 79
IBM [ IBM ]
