IBMN612404GT3B
IBMN612804GT3B
128Mb Double Data Rate Synchronous DRAM
Preliminary
Normal Strength Driver Pullup Characteristics
0
Minimum
Typical Low
Typical High
Maximum
-200
0
2.7
V
(V)
OUT
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will
1.7, for device drain to source voltages from 0.1 to 1.0.
not exceed
6. The full variation in the ratio of the “typical” IBIS pullup to “typical” IBIS pulldown current should be unity +
10%, for device drain to source voltages from 0.1 to 1.0. This specification is a design objective only. It is
not guaranteed.
7. These characteristics are intended to obey the SSTL_2 class II standard.
8. This specification is intended for DDR SDRAM only.
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Use is further subject to the provisions at the end of this document.
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