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IBMN612405GT3B-8N 参数 Datasheet PDF下载

IBMN612405GT3B-8N图片预览
型号: IBMN612405GT3B-8N
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX4, 0.8ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66]
分类和应用: 时钟动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 79 页 / 1280 K
品牌: IBM [ IBM ]
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IBMN612404GT3B  
IBMN612804GT3B  
128Mb Double Data Rate Synchronous DRAM  
Preliminary  
Capacitance  
Parameter  
Input Capacitance: CK, CK  
Symbol  
CI  
Min.  
2.0  
Max.  
3.0  
Units  
pF  
Notes  
1
1
1
Delta Input Capacitance: CK, CK  
delta CI  
0.25  
3.0  
pF  
1
Input Capacitance: All other input-only pins (except DM)  
Delta Input Capacitance: All other input-only pins (except DM)  
Input/Output Capacitance: DQ, DQS, DM  
Delta Input/Output Capacitance: DQ, DQS, DM  
Output Capacitance: QFC  
CI  
2.0  
4.0  
2.0  
pF  
1
2
delta CI  
0.5  
pF  
1
2
C
5.0  
pF  
1, 2  
1
IO  
delta C  
0.5  
pF  
IO  
CO  
4.0  
pF  
1
1
1. V  
= V = 2.5V 0.2V (minimum range to maximum range), f = 100MHz, T = 25°C, VO = V  
, VO = 0.2V.  
Peak -Peak  
DDQ  
DD  
A
DC  
DDQ/2  
2. Although DM is an input-only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins. This  
is required to match input propagation times of DQ, DQS and DM in the system.  
DC Electrical Characteristics and Operating Conditions  
(0˚C TA 70°C; VDDQ = 2.5V ± 0.2V, VDD = + 2.5V ± 0.2V, see AC Characteristics)  
Symbol  
Parameter  
Min  
2.3  
2.3  
Max  
2.7  
Units  
V
Notes  
V
Supply Voltage  
1
1
DD  
V
I/O Supply Voltage  
2.7  
V
DDQ  
Supply Voltage  
I/O Supply Voltage  
V
, V  
0
0
V
SS  
SSQ  
V
I/O Reference Voltage  
0.49 x V  
0.51 x V  
DDQ  
V
V
V
V
V
V
1, 2  
1, 3  
1
REF  
DDQ  
V
I/O Termination Voltage (System)  
V
V
0.04  
+ 0.15  
V
+ 0.04  
REF  
TT  
REF  
REF  
V
Input High (Logic1) Voltage  
V
+ 0.3  
DDQ  
IH(DC)  
V
Input Low (Logic0) Voltage  
0.3  
V
0.15  
REF  
1
IL(DC)  
IN(DC)  
ID(DC)  
V
V
Input Voltage Level, CK and CK Inputs  
Input Differential Voltage, CK and CK Inputs  
V-I Matching Pullup Current to Pulldown Current Ratio  
0.3  
0.30  
0.71  
V
+ 0.3  
+ 0.6  
1
DDQ  
DDQ  
V
1, 4  
5
VI  
1.4  
Ratio  
Input Leakage Current  
I
5  
5  
5
5
µA  
µA  
1
1
I
Any input 0V V V ; (All other pins not under test = 0V)  
IN  
DD  
Output Leakage Current  
(DQs are disabled; 0V V V  
I
OZ  
out  
DDQ  
I
Output Current: Nominal Strength Driver  
16.8  
OH  
High current (V  
Low current (V  
= V  
-0.373V, min V  
, min V )  
TT  
mA  
1
OUT  
DDQ  
REF  
I
16.8  
= 0.373V, max V  
, max V )  
OL  
OUT  
REF  
TT  
1. Inputs are not recognized as valid until V  
stabilizes.  
REF  
2. V  
is expected to be equal to 0.5 V  
of the transmitting device, and to track variations in the DC level of the same. Peak-to-  
REF  
DDQ  
peak noise on V  
may not exceed 2% of the DC value.  
REF  
3. V is not applied directly to the device. V is a system supply for signal termination resistors, is expected to be set equal to V ,  
REF  
TT  
TT  
and must track variations in the DC level of V  
.
REF  
4. V is the magnitude of the difference between the input level on CK and the input level on CK.  
ID  
5. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire tempera-  
ture and voltage range, for device drain to source voltages for 0.25 volts to 1.0 volts. For a given output, it represents the maximum  
difference between pullup and pulldown drivers due to process variation.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
06K0566.F39350B  
1/01  
Page 52 of 79  
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