IBMN325164CT3
IBMN325804CT3
IBMN325404CT3
Preliminary
256Mb Synchronous DRAM - Die Revision B
Non-Minimum Read to Write Interval
(Burst Length = 4, CAS latency = 2, 3)
T5 T6 T7 T8
T0
T1
T2
T3
T4
CK
DQM
READ A
NOP
WRITE A
NOP
NOP
NOP
NOP
NOP
NOP
COMMAND
CL = 2: DQM needed to mask
first, second bit of READ data.
CAS latency = 2
DIN A
DIN A
DIN A
DIN A
DIN A
0
1
2
3
tCK2, DQs
CL = 3: DQM needed to
mask first bit of READ data.
CAS latency = 3
DIN A
DIN A
DIN A
0
1
2
3
tCK3, DQs
: DQM high for CAS latency = 2
: DQM high for CAS latency = 3
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Use is further subject to the provisions at the end of this document.
06K0608.F39375A
10/00
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