IBMB3N32644HCB
IBMB3N32734HCB
Preliminary
32M x 64/72 One-Bank Unbuffered SDRAM Module
DC Output Load Circuit
3.3 V
1200Ω
V
(DC) = 2.4V, I = -2mA
OH
OH
Output
V
(DC) = 0.4V, I = 2mA
OL
OL
50pF
870Ω
Input/Output Characteristics (TA= 0 to +70°C, VDD= 3.3V ± 0.3V)
x64
x72
Symbol
Parameter
Units Notes
Min. Max. Min. Max.
RAS, CAS, WE, CKE0,
A0-A9, A10/AP, A11, A12, BA0, BA1
-8
+8
-9
+9
CK0
-4
-4
+4
+4
+4
+4
+1
+1
+1
0
-5
-4
+5
+4
+5
+4
+2
+1
+1
+1
+10
+50
+1
+1
+10
-
CK2
S0
-4
-5
Input Leakage Current, any input
S2
DQMB1
-4
-4
(0.0V ≤ V ≤ V ), All Other Pins
I
µA
IN
DD
I(L)
-1
-2
Not Under Test = 0V
DQMB0, 2, 3, 4, 5, 6, 7
DQ0 - 63
-1
-1
-1
-1
CB0 - 7
0
-1
SA0, SA1, SA2, SCL, SDA
WP
-10
-10
-1
+10
+50
+1
0
-10
-10
-1
DQ0 - 63
Output Leakage Current
I
µA
O(L)
(D
is disabled, 0.0V ≤ V
≤ V
)
DD
OUT
OUT
CB0 - 7
0
-1
SDA
-10
2.4
+10
-
-10
2.4
Output Level (LVTTL)
Output “H” Level Voltage (I
V
OH
= -2.0mA)
= +2.0mA)
OUT
1
V
Output Level (LVTTL)
Output “L” Level Voltage (I
V
-
0.4
-
0.4
OL
OUT
1. See DC output load circuit.
06K3671.H01574
11/00
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
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