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IBMB3N32734HCB-75AT 参数 Datasheet PDF下载

IBMB3N32734HCB-75AT图片预览
型号: IBMB3N32734HCB-75AT
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM Module, 32MX72, 5.4ns, CMOS, DIMM-168]
分类和应用: 时钟动态存储器内存集成电路
文件页数/大小: 18 页 / 314 K
品牌: IBM [ IBM ]
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IBMB3N32644HCB  
IBMB3N32734HCB  
32M x 64/72 One-Bank Unbuffered SDRAM Module  
Preliminary  
Serial Presence Detect (Part 1 of 2)  
Serial PD Data Entry (Hexa-  
Byte #  
Description  
SPD Entry Value  
Notes  
decimal)  
0
1
2
3
4
5
Number of Serial PD Bytes Written during Production  
Total Number of Bytes in Serial PD device  
Fundamental Memory Type  
128  
80  
256  
08  
SDRAM  
04  
Number of Row Addresses on Assembly  
Number of Column Addresses on Assembly  
Number of DIMM Banks  
13  
0D  
0A  
01  
10  
1
16M x 64  
16M x 72  
x64  
4000  
4800  
01  
6 - 7  
Data Width of Assembly  
x72  
8
9
Voltage Interface Level of this Assembly  
SDRAM Device Cycle Time at CL=3  
LVTTL  
7.5ns  
75  
1
10  
SDRAM Device Access Time from Clock at CL=3  
5.4ns  
54  
16M x 64  
16 M x 72  
Non-Parity  
00  
11  
DIMM Configuration Type  
ECC  
02  
12  
13  
Refresh Rate/Type  
SR/1x(15.625us)  
80  
Primary SDRAM Device Width  
x8  
08  
16M x 64  
16M x 72  
N/A  
00  
14  
Error Checking SDRAM Device Width  
x8  
08  
15  
16  
17  
18  
19  
20  
21  
SDRAM Device Attr: Min Clk Delay, Random Col Access  
SDRAM Device Attributes: Burst Lengths Supported  
SDRAM Device Attributes: Number of Device Banks  
SDRAM Device Attributes: CAS Latencies Supported  
SDRAM Device Attributes: CS Latency  
1 Clock  
01  
1,2,4,8  
0F  
4
04  
2, 3  
06  
0
0
01  
SDRAM Device Attributes: WE Latency  
01  
SDRAM Module Attributes  
Unbuffered  
00  
Wr-1/Rd Burst, Precharge All,  
Auto-Precharge, VDD +/- 10%  
22  
SDRAM Device Attributes: General  
0E  
23  
24  
25  
26  
27  
28  
29  
Minimum Clock Cycle at CL=2  
15.0ns  
9.0ns  
N/A  
F0  
90  
00  
00  
14  
0F  
14  
Maximum Data Access Time (tAC) from Clock at CL=2  
1
Minimum Clock Cycle Time at CL=1  
Maximum Data Access Time (tAC) from Clock at CL=1  
N/A  
Minimum Row Precharge Time (tRP  
Minimum Row Active to Row Active delay (tRRD  
Minimum RAS to CAS delay (tRCD  
)
20ns  
15ns  
20ns  
)
)
Minimum RAS Pulse width (tRAS  
)
30  
31  
32  
33  
34  
35  
45ns  
256MB  
1.5ns  
2D  
40  
15  
08  
15  
08  
00  
43  
Module Bank Density  
Address and Command Setup Time Before Clock  
Address and Command Hold Time After Clock  
Data Input Setup Time Before Clock  
0.8ns  
1.5ns  
Data Input Hold Time After Clock  
0.8ns  
36 - 40 Reserved for VCSDRAM  
Minimum Bank Cycle Time (tRC  
Undefined  
67ns  
)
41  
1. See the AC output load circuit in the AC Characteristics section below  
2. cc = Checksum Data byte, 00-FF (Hex)  
3. “MM” = Alphanumeric revision code, A-Z, 0-9  
4. mm= ASCII coded revision code byte “MM”  
5. yy = Binary coded decimal year code, 00-99 (Decimal) 00-63 (Hex)  
6. ww = Binary coded decimal week code, 01-52 (Decimal) 01-34 (Hex)  
7. ss = Serial number data byte, 00-FF (Hex)  
8. For PC-100 applications only.  
06K3671.H01574  
11/00  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
Page 6 of 18  
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