Data Sheet
PowerPC® 750CXe RISC Microprocessor
Preliminary
3. General Parameters
Table 3-1 provides a summary of the general parameters of the PowerPC 750CXe.
Table 3-1. General Parameters
Item
Description
Technology
Die size
0.18µm CMOS Copper technology, six-layer metallization
2
42.7mm
Transistor count
Logic design
20 million (including L2 cache)
Fully static
Surface mount 256-lead plastic ball grid array (PBGA)
27mm x 27mm
Package
Core power supply
I/O power supply
+1.8V nominal (see performance sort in Section 1.3 on Page 3)
+1.8V 5%
+2.5V 5%
General Parameters
Page 6 of 36
750cxe_DD3.1_Dev_3_gen_mkt.fm.1.5
April 8, 2004