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IBM11T8645HP-60T 参数 Datasheet PDF下载

IBM11T8645HP-60T图片预览
型号: IBM11T8645HP-60T
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM Module, 8MX64, 60ns, CMOS]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 32 页 / 903 K
品牌: IBM [ IBM ]
 浏览型号IBM11T8645HP-60T的Datasheet PDF文件第7页浏览型号IBM11T8645HP-60T的Datasheet PDF文件第8页浏览型号IBM11T8645HP-60T的Datasheet PDF文件第9页浏览型号IBM11T8645HP-60T的Datasheet PDF文件第10页浏览型号IBM11T8645HP-60T的Datasheet PDF文件第12页浏览型号IBM11T8645HP-60T的Datasheet PDF文件第13页浏览型号IBM11T8645HP-60T的Datasheet PDF文件第14页浏览型号IBM11T8645HP-60T的Datasheet PDF文件第15页  
Discontinued (9/98 - last order; 3/99 last ship)  
IBM11T8645HP  
8M x 64 144 PIN SO DIMM  
Read-Modify-Write Cycle  
-50  
-60  
Symbol  
Parameter  
Unit  
Notes  
Min  
109  
65  
28  
40  
7
Max  
Min  
135  
79  
Max  
tRWC  
tRWD  
tCWD  
tAWD  
tOEH  
Read-Modify-Write Cycle Time  
RAS to WE Delay Time  
ns  
ns  
ns  
ns  
ns  
1
1
1
CAS to WE Delay Time  
34  
Column Address to WE Delay Time  
OE Command Hold Time  
49  
10  
1. tWCS, tRWD, tCWD, tAWD, and tCPW are not restrictive parameters. They are included in the data sheet as electrical characteristics only.  
If tWCS tWCS(min.), the entire cycle is an early write cycle and the data pin will remain open circuit (high impedance) through the  
entire cycle; If tRWD tRWD(min.), tCWD tCWD(min.), tAWD tAWD(min.) and tCPW tCPW(min.)(Fast Page Mode), the cycle is a Read-  
Modify-Write cycle and the data will contain read from the selected cell: If neither of the above sets of conditions are met, the con-  
dition of the data (at access time) is indeterminate.  
EDO Mode Cycle  
-50  
Max.  
-60  
Max.  
Symbol  
Parameter  
Units  
Notes  
Min.  
8
Min.  
10  
25  
66  
5
tHCAS  
tHPC  
tHPRWC  
tDOH  
CAS Pulse Width (Hyper Page Mode)  
Hyper Page Mode Cycle Time (Read/Write)  
Hyper Page Mode Read Modify Write Cycle Time  
Data-out Hold Time from CAS  
100K  
10K  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
20  
54  
5
tWHZ  
Output buffer Turn-Off Delay from WE  
WE Pulse Width to Output Disable at CAS High  
RAS Hold Time from CAS Precharge  
Access Time from CAS Precharge  
Hyper Page Mode RAS Pulse Width  
OE High Pulse Width  
0
10  
0
10  
tWPZ  
7
10  
35  
60  
10  
10  
tCPRH  
tCPA  
tRASP  
tOEP  
27  
50  
5
27  
35  
1
200K  
200K  
tOEHC  
OE High Hold Time from CAS High  
10  
1. Measured with the specified current load and 100pF at VOL = 0.8V and VOH = 2.0V.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
75H3164  
GA14-4479-02  
Rev 11/97