Discontinued (9/98 - last order; 3/99 last ship)
IBM11T8645HP
8M x 64 144 PIN SO DIMM
Read-Modify-Write Cycle
-50
-60
Symbol
Parameter
Unit
Notes
Min
109
65
28
40
7
Max
—
Min
135
79
Max
—
tRWC
tRWD
tCWD
tAWD
tOEH
Read-Modify-Write Cycle Time
RAS to WE Delay Time
ns
ns
ns
ns
ns
—
—
1
1
1
CAS to WE Delay Time
—
34
—
Column Address to WE Delay Time
OE Command Hold Time
—
49
—
—
10
—
1. tWCS, tRWD, tCWD, tAWD, and tCPW are not restrictive parameters. They are included in the data sheet as electrical characteristics only.
If tWCS ≥ tWCS(min.), the entire cycle is an early write cycle and the data pin will remain open circuit (high impedance) through the
entire cycle; If tRWD ≥ tRWD(min.), tCWD ≥ tCWD(min.), tAWD ≥ tAWD(min.) and tCPW ≥ tCPW(min.)(Fast Page Mode), the cycle is a Read-
Modify-Write cycle and the data will contain read from the selected cell: If neither of the above sets of conditions are met, the con-
dition of the data (at access time) is indeterminate.
EDO Mode Cycle
-50
Max.
-60
Max.
Symbol
Parameter
Units
Notes
Min.
8
Min.
10
25
66
5
tHCAS
tHPC
tHPRWC
tDOH
CAS Pulse Width (Hyper Page Mode)
Hyper Page Mode Cycle Time (Read/Write)
Hyper Page Mode Read Modify Write Cycle Time
Data-out Hold Time from CAS
100K
—
10K
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
54
5
—
—
—
—
tWHZ
Output buffer Turn-Off Delay from WE
WE Pulse Width to Output Disable at CAS High
RAS Hold Time from CAS Precharge
Access Time from CAS Precharge
Hyper Page Mode RAS Pulse Width
OE High Pulse Width
0
10
0
10
tWPZ
7
—
10
35
—
60
10
10
—
tCPRH
tCPA
tRASP
tOEP
27
—
50
5
—
—
27
35
1
200K
—
200K
—
tOEHC
OE High Hold Time from CAS High
10
—
—
1. Measured with the specified current load and 100pF at VOL = 0.8V and VOH = 2.0V.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
75H3164
GA14-4479-02
Rev 11/97
Page 11 of 32